A method that can readily form a cavity structure between metallic wirings in, for example, semiconductors using a polyamic acid and/or a polyimide obtained by reacting a specific alicyclic tetracarboxylic acid dianhydride and a specific alicyclic diamine. The method includes a step of coating the surface of a first dielectric film formed on a semiconductor substrate with a polyamic acid and/or a polyimide, a step of patterning a cavity-forming polymer between the multilayered wirings, a step of forming a second dielectric film on the cavity-forming polymer between the multilayered wirings containing a metallic wiring, and a step of removing the cavity-forming polymer between the multilayered wirings by heating to form a cavity between the metallic wirings.
一种可在半导体等
金属导线之间方便地形成空腔结构的方法,该方法使用一种聚酰胺酸和/或一种聚
酰亚胺,该聚酰胺酸和/或聚
酰亚胺是通过特定脂环族四
羧酸二酐和特定脂环族二胺反应获得的。该方法包括在半导体衬底上形成的第一层电介质膜表面涂上聚酰胺酸和/或聚
酰亚胺的步骤,在多层导线之间将空腔形成聚合物图案化的步骤,在含有
金属导线的多层导线之间的空腔形成聚合物上形成第二层电介质膜的步骤,以及通过加热去除多层导线之间的空腔形成聚合物以在
金属导线之间形成空腔的步骤。