[EN] SUBSTITUTED 1,2,3-TRIYLIDENETRIS(CYANOMETHANYLYLIDENE)) CYCLOPROPANES FOR VTE, ELECTRONIC DEVICES AND SEMICONDUCTING MATERIALS USING THEM<br/>[FR] 1,2,3-TRIYLIDÈNETRIS(CYANOMÉTHANYLYLIDÈNE)) CYCLOPROPANES SUBSTITUÉS POUR VTE, DISPOSITIFS ÉLECTRONIQUES ET MATÉRIAUX SEMI-CONDUCTEURS LES UTILISANT
申请人:NOVALED GMBH
公开号:WO2016097017A1
公开(公告)日:2016-06-23
The present invention relates to a process for preparation of an electrically doped semiconducting material comprising a [3]-radialene p-dopant or for preparation of an electronic device containing a layer comprising a [3]-radialene p-dopant, the process comprising the steps : (i) loading an evaporation source with the [3]-radialene p-dopant; and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure, wherein the [3]-radialene p-dopant is selected from compounds having a structure according to formula (I) wherein A1 and A2 are independently aryl- or heteroaryl- substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A1 and A2 from 4-cyano-2,3,5,6-tetrafluorphenyl,2,3,5,6-tetrafluorpyridine-4-yl, 4-trifluormethyl-2,3,5,6-tetrafluorphenyl, 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl, 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-tris(trifluormethyl)-1,3-diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,5,6-trifluorpyridine-4-yl, 2-trifluormethyl-3,5,6-trifluorpyridine-4-yl, 2,5,6-trifluor-1,3-diazine-4-yl and 3-trifluormethyl-4-cyano-2,5,6-trifluophenyl), and at least one aryl or heteroaryl is 2,3,5,6-tetrafluorpirydine-4-yl, 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyI, 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-tris(trifluormethyl)-1,3-diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,5,6-trifluorpyridine-4-yl, 2-trifluormethyl-3,5,6-trifluorphenyl, provided that the heteroaryl in both A1 and A2 cannot be 2,3,5,6-tetrafluorpyridine-4-yl at the same time, respective [3]-radialene compounds, and semiconducting materials and layer, and electronic devices comprising said compounds.
本发明涉及一种制备电掺杂半导体材料的方法,该方法包括使用[3]-辐烯p-掺杂剂制备电子器件中含有一层[3]-辐烯p-掺杂剂的步骤:(i)将蒸发源装载[3]-辐烯p-掺杂剂;(ii)在升高的温度和降低的压力下蒸发[3]-辐烯p-掺杂剂,其中[3]-辐烯p-掺杂剂是从具有以下公式(I)结构的化合物中选择的,其中A1和A2是独立的芳基或杂环芳基取代的氰甲烯基,芳基和/或杂环芳基在A1和A2中是独立选择的,包括4-氰基-2,3,5,6-四氟苯基、2,3,5,6-四氟吡啶-4-基、4-三氟甲基-2,3,5,6-四氟苯基、2,4-双(三氟甲基)-3,5,6-三氟苯基、2,5-双(三氟甲基)-3,4,6-三氟苯基、2,4,6-三(三氟甲基)-1,3-二嗪-5-基、3,4-二氰基-2,5,6-三氟苯基、2-氰基-3,5,6-三氟吡啶-4-基、2-三氟甲基-3,5,6-三氟吡啶-4-基、2,5,6-三氟-1,3-二嗪-4-基和3-三氟甲基-4-氰基-2,5,6-三氟苯基,至少一个芳基或杂环芳基是2,3,5,6-四氟吡啶-4-基、2,4-双(三氟甲基)-3,5,6-三氟苯基、2,5-双(三氟甲基)-3,4,6-三氟苯基、2,4,6-三(三氟甲基)-1,3-二嗪-5-基、3,4-二氰基-2,5,6-三氟苯基、2-氰基-3,5,6-三氟吡啶-4-基、2-三氟甲基-3,5,6-三氟苯基,但A1和A2中的杂环芳基不能同时为2,3,5,6-四氟吡啶-4-基,分别是[3]-辐烯化合物、半导体材料和层,以及包含该化合物的电子器件。