The present invention is directed to a mild, efficient, and general direct C(sp)-H bond silylation. Various embodiments includes methods, each method comprising or consisting essentially of contacting at least one organic substrate comprising a terminal alkynyl C—H bond, with a mixture of at least one organosilane and an alkali metal hydroxide, under conditions sufficient to form a silylated terminal alkynyl moiety. The methods are operable in the substantially absence of transition-metal compounds. The systems associated with these methods are also disclosed.
本发明涉及一种温和、高效且通用的直接C(sp)-H键
硅化方法。各种实施例包括方法,每种方法包括或主要包括将至少一种含有末端炔基C—H键的有机底物与至少一种有机
硅烷和碱
金属氢氧化物的混合物接触,条件足以形成
硅化的末端炔基基团。这些方法在基本上不含过渡
金属化合物的情况下可操作。与这些方法相关的系统也被揭示。