Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2826826A1
公开(公告)日:2015-01-21
The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.
本发明提供了一种用于形成涂层型 BPSG 薄膜的组合物,该组合物包括:由以下通式 (1) 所代表的硅酸作为骨架结构的一种或多种结构、由以下通式 (2) 所代表的磷酸作为骨架结构的一种或多种结构以及由以下通式 (3) 所代表的硼酸作为骨架结构的一种或多种结构。本发明可提供一种用于形成涂层型 BPSG 薄膜的组合物,该组合物在精细图案方面具有优异的粘附性,可通过剥离溶液轻松进行湿蚀刻,不会对半导体设备基板、涂层型有机薄膜或图案化过程中所需的主要由碳构成的 CVD 薄膜造成任何损害,并且通过在涂层过程中形成该组合物,可抑制颗粒的生成。