Ruthenocenes and Half‐Open Ruthenocenes: Synthesis, Characterization, and Their Use as CVD Precursors for Ruthenium Thin Film Deposition
作者:André Tuchscherer、Colin Georgi、Nina Roth、Dieter Schaarschmidt、Tobias Rüffer、Thomas Waechtler、Stefan E. Schulz、Steffen Oswald、Thomas Gessner、Heinrich Lang
DOI:10.1002/ejic.201200601
日期:2012.10
groups, the higher the deposition temperature. All compounds were applied as precursors in MOCVD. The depositions on Si/SiO2 targets were carried out in a vertical cold-wall CVD reactor between 633 and 688 K with a flow rate of 50 mL min–1 using nitrogen as the carrier gas and oxygen as the coreactant (50 mL min–1). With the tBu-functionalized ruthenocenes 6 and 10 ruthenium thin films were obtained, while
用于制备一系列 Ru(η5-C5H3R1R2)(η5-C5H3R3R4) (2, R1 = SiMe3, R2 = R3 = R4 = H; 3, R1) 的三甲基甲硅烷基和叔丁基取代的钌的连续合成方法= R3 = SiMe3, R2 = R4 = H; 4, R1 = R2 = R3 = SiMe3, R4 = H; 5, R1 = R2 = R3 = R4 = SiMe3; 6, R1 = R3 = tBu, R2 = R4 = H ; 7, R1 = R3 = tBu, R2 = SiMe3, R4 = H; 8, R1 = R3 = tBu, R2 = R4 = SiMe3) 和 Ru(η5-2,3-Me2C5H5)(η5-C5H4R) (10, R = tBu; 12, R = SiMe3) 进行了讨论,并报告了它们作为 MOCVD 前体用于钌沉积的用途。报告了固态下 3、5-8、10