2-乙基己酸钇 | 114012-65-6

• 物质功能分类: 有机原料 - 有机金属类化合物 - 有机钪、钽、铊、钨、锑、镧、铅、钒、钼、铬、镱等
• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 中文名称: 2-乙基己酸钇
• 英文名称: Yttrium(III) 2-ethylhexanoate
• 英文别名: 2-ethylhexanoate;yttrium(3+)
• CAS: 114012-65-6；103470-68-4
• 化学式: C24H45O6Y
• 分子量: 518.5
• InChiKey: AGOMHFKGCMKLDA-UHFFFAOYSA-K

物化性质

• 暴露限值：
  ACGIH: TWA 50 ppm (Skin)OSHA: TWA 500 ppm(1800 mg/m3)NIOSH: IDLH 1100 ppm; TWA 50 ppm(180 mg/m3)

计算性质

• 辛醇/水分配系数(LogP)：
  2.86
• 重原子数：
  31
• 可旋转键数：
  12
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  120
• 氢给体数：
  0
• 氢受体数：
  6

安全信息

• 危险等级：
  3
• 危险品标志：
  Xi
• 安全说明：
  S26,S37/39
• 危险类别码：
  R36/37/38
• WGK Germany：
  3

反应信息

• 作为产物：
  描述：

  Yttrium acetate 、 2-乙基-己酸稀土盐 以to produce yttrium tri(2-ethylhexanoate) in 2-ethylhexanoic acid的产率得到2-乙基己酸钇
  参考文献：
  名称：

  Barrier layer arrangement for conductive layers on silicon substrates

  摘要：

  本发明揭示了一种用于保护硅衬底和上层导电层不互相污染的屏障层三元组，以及其制备方法。该屏障层三元组由三个层组成，第一个三元组层位于硅衬底旁边，主要由二氧化硅组成；第三个三元组层远离硅衬底，主要由至少一种第四族重金属氧化物组成；第二个三元组层位于第一个和第三个三元组层之间，主要由二氧化硅和至少一种第四族重金属氧化物的混合物组成。

  公开号：

  US04908348A1

文献信息

• Method of forming a barrier layer arrangement for conductive layers on
  申请人：Eastman Kodak Company

  公开号：US04994434A1

  公开（公告）日：1991-02-19

  A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct interaction with the substrate. A silica layer of at least 2000 .ANG. in thickness is deposited on the silicon substrate, and followed by deposition on the silica layer of a Group 4 heavy metal to form a layer having a thickness in the range of from 1500 to 3000 .ANG.. Heating the layers in the absence of a reactive atmosphere to permit oxygen migration from the silica layer forms a barrier layer triad consisting of a silica first triad layer located adjacent the silicon substrate, a heavy Group 4 metal oxide third triad layer remote from the silicon substrate, and a Group 4 heavy metal silicide second triad layer interposed between the first and third triad layers.

  公开了一种在晶体硅基底上制备屏障层三元组的方法，该三元组能够保护稀土碱土铜氧导电涂层免受与基底的直接相互作用。首先，在硅基底上沉积至少2000 .ANG.厚度的二氧化硅层，然后在二氧化硅层上沉积第4族重金属，形成厚度在1500至3000 .ANG.范围内的层。在无反应气氛中加热层，以允许氧从二氧化硅层迁移，形成由硅第一三元组层、重第4族金属硅酸盐第二三元组层和远离硅基底的第4族重金属氧化物第三三元组层组成的屏障层三元组。
• Barrier layer containing conductive articles
  申请人：Eastman Kodak Company

  公开号：US05017551A1

  公开（公告）日：1991-05-21

  A circuit element is disclosed comprised of a substrate and an electrically conductive layer located on the substrate. The electrically conductive layer is comprised of a crystalline rare earth alkaline earth copper oxide. The substrate is formed of a material which increases the electrical resistance of the conductive layer when in contact with the rare earth alkaline earth copper oxide during crystallization of the latter to an electrically conductive form. A barrier layer is interposed between the electrically conductive layer and the substrate. The barrier layer contains magnesium, a group IVA metal, or a platinum group metal, either in an elemental state or in the form of an oxide or silicide. The circuit element is produced by first forming the barrier layer on the substrate followed by coating conductor precursor metal-ligand compounds of each of rare earth, alkaline earth, and copper containing at least one thermally volatilizable ligand and heating the precursor metal-ligand compounds in the presence of oxygen to produce a crystalline rare earth alkaline earth copper oxide electrically conductive layer.

  本文披露了一种电路元件，包括基底和位于基底上的电性导体层。该电性导体层由结晶稀土碱土铜氧化物组成。基底由一种材料形成，当与稀土碱土铜氧化物接触并结晶成电性导体形式时，增加了导体层的电阻。在电性导体层和基底之间插入了一层障碍层。该障碍层含有镁、IVA族金属或铂族金属，可以是元素状态或氧化物或硅化物形式。该电路元件的制造方法是首先在基底上形成障碍层，然后涂覆含有稀土、碱土和铜的导体前体金属-配体化合物，其中至少含有一种热挥发性配体，并在氧气存在下加热前体金属-配体化合物，以产生结晶稀土碱土铜氧化物电性导体层。
• Conductive articles and processes for their preparation
  申请人：Eastman Kodak Company

  公开号：US05070072A1

  公开（公告）日：1991-12-03

  Articles are disclosed in which an electrically conductive layer on a substrate exhibits a superconducting transition temperature in excess of 30.degree. K. Conductive layers are disclosed comprised of a crystalline rare earth alkaline earth copper oxide. Processes of preparing these articles are disclosed in which a mixed metal oxide precursor composition is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then heated to its crystallization temperature.

  本文介绍了一种在基板上的电导层，其超导转变温度超过30度K。这些电导层由晶体稀土碱土铜氧化物组成。本文还介绍了制备这些文章的过程，其中涂覆混合金属氧化物前体组成物，并加热至其热分解温度以创建非晶混合金属氧化物层。然后将非晶层加热至其结晶温度。
• Metalorganic deposition process for preparing superconducting oxide films
  申请人：Eastman Kodak Company

  公开号：US04880770A1

  公开（公告）日：1989-11-14

  A metalorganic deposition method is disclosed for manufacturing a superconducting oxide film on a substrate, in which a mixed metalorganic precursor is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then converted to a crystalline coating by further heating followed by cooling in the presence of O.sub.2 atmosphere.

  本发明揭示了一种金属有机沉积法，用于在基板上制造超导氧化物薄膜，其中混合的金属有机前体被涂覆并加热至其热分解温度，以创建非晶混合金属氧化物层。然后通过进一步加热，再在O.sub.2气氛中冷却，将非晶层转变为结晶涂层。
• Barrier layer arrangement for conductive layers on silicon substrates
  申请人：Eastman Kodak Company

  公开号：US04908348A1

  公开（公告）日：1990-03-13

  A barrier layer triad intended to protect a silicon substrate and an overlying conductive layer from mutual contamination is disclosed as well as a process for its preparation. The barrier layer triad is comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of at least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.

  本发明揭示了一种用于保护硅衬底和上层导电层不互相污染的屏障层三元组，以及其制备方法。该屏障层三元组由三个层组成，第一个三元组层位于硅衬底旁边，主要由二氧化硅组成；第三个三元组层远离硅衬底，主要由至少一种第四族重金属氧化物组成；第二个三元组层位于第一个和第三个三元组层之间，主要由二氧化硅和至少一种第四族重金属氧化物的混合物组成。