Frustrated Lewis Pair Chelation as a Vehicle for Low‐Temperature Semiconductor Element and Polymer Deposition
作者:Alvaro A. Omaña、Rachel K. Green、Ryo Kobayashi、Yingjie He、Evan R. Antoniuk、Michael J. Ferguson、Yuqiao Zhou、Jonathan G. C. Veinot、Takeaki Iwamoto、Alex Brown、Eric Rivard
DOI:10.1002/ange.202012218
日期:2021.1.4
an intramolecular Frustrated Lewis Pair (FLP) ligand, PB, iPr2P(C6H4)BCy2 (Cy=cyclohexyl) is reported. The resulting hydride complexes [PBSiH2}] and [PBGeH2}] are indefinitely stable at room temperature, yet can deposit films of silicon and germanium, respectively, upon mild thermolysis in solution. Hallmarks of this work include: 1) the ability to recycle the FLP phosphine‐borane ligand (PB) after
摘要通过分子内受阻路易斯对 (FLP) 配体稳定二氢化硅 (II) 和二氢化锗 (II),PB,我普罗2个人电脑6H4)BCy2报道了(Cy=环己基)。生成的氢化物配合物 [PBSiH2}] 和 [PBGeH2}]在室温下无限稳定,但在溶液中温和热解时可以分别沉积硅和锗薄膜。这项工作的特点包括:1)回收 FLP 膦硼烷配体的能力(PB) 元素沉积后,以及 2) 单源前驱体 [PBSiH2}] 在创纪录的低温下从溶液中沉积硅薄膜(110°C)。二烷基硅(II)加合物[PBSiMe2}] 也被制备出来,并被证明可以释放聚(二甲基硅烷)[SiMe2]n加热时。总的来说,这项研究引入了半导体的“闭环”沉积策略,引导材料科学远离使用刺激性试剂或高温。