申请人:E. I. du Pont de Nemours and Company
公开号:US08088658B2
公开(公告)日:2012-01-03
Methods for fabricating a capacitor are provided. In the methods, a dielectric may be formed on a metal (e.g. nickel) substrate, and a copper electrode is formed thereon, followed by the thinning of the metal substrate from its non-coated face, and subsequently forming a copper electrode on the thinned, non-coated face of the substrate.
提供了一种制造电容器的方法。在这些方法中,可以在金属(例如镍)基板上形成介电层,然后在其上形成铜电极,接着从未涂层的一面上薄化金属基板,然后在薄化的未涂层面上形成铜电极。