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2-Trichlormethyl-bicyclo<2.2.1>heptan | 90086-53-6

中文名称
——
中文别名
——
英文名称
2-Trichlormethyl-bicyclo<2.2.1>heptan
英文别名
2-Trichloromethyl-1-bicyclo[2.2.1]heptane;2-(trichloromethyl)bicyclo[2.2.1]heptane
2-Trichlormethyl-bicyclo<2.2.1>heptan化学式
CAS
90086-53-6
化学式
C8H11Cl3
mdl
——
分子量
213.534
InChiKey
PZGSZIFMGBRMEJ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4.4
  • 重原子数:
    11
  • 可旋转键数:
    0
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

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文献信息

  • METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM
    申请人:JSR Corporation
    公开号:EP1705206A1
    公开(公告)日:2006-09-27
    There are provided a method for producing a polymer, a polymer, an insulating-film-forming composition, a method for producing an insulating film, and an insulating film capable of forming a film which is suitably used as an interlayer dielectric for semiconductor devices or the like and exhibits a low relative dielectric constant, excellent mechanical strength and adhesion, and uniform quality. A method for producing a polymer of the invention comprises hydrolyzing and condensing (B) a hydrolyzable-group-containing silane monomer in the presence of (A) a polycarbosilane, the polycarbosilane (A) being a polymer (I) obtained by reacting (a) a compound shown by the following general formula (1) and (b) at least one compound selected from the group consisting of a compound shown by the following general formula (2) and a compound shown by the following general formula (3) in an organic solvent in the presence of at least one of an alkali metal and an alkaline earth metal,         R1kCX4-k     (1)         R2kSiY4-k     (2)         R3mY3-mSiCR4nX3-n     (3) wherein R1 to R4 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, k represents an integer from 0 to 3, and m and n individually represent integers from 0 to 2.
    本发明提供了一种聚合物的生产方法、一种聚合物、一种绝缘成膜组合物、一种绝缘膜的生产方法,以及一种能够形成薄膜的绝缘膜,该薄膜适合用作半导体器件或类似器件的层间电介质,并具有较低的相对介电常数、优异的机械强度和附着力以及均匀的质量。 生产本发明聚合物的方法包括在(A)聚碳酸酯硅烷存在下水解和缩合(B)含可水解基团的硅烷单体、聚碳硅烷(A)为聚合物(I),由(a)下式(1)所示化合物和(b)至少一种选自下式(2)所示化合物和下式(3)所示化合物组成的组的化合物在有机溶剂中,在碱金属和碱土金属中至少一种存在下反应而得、 R1kCX4-k (1) R2kSiY4-k (2) R3mY3-mSiCR4nX3-n (3) 其中 R1 至 R4 分别代表一价有机基团或氢原子,X 代表卤素原子,Y 代表卤素原子或烷氧基,k 代表 0 至 3 的整数,m 和 n 分别代表 0 至 2 的整数。
  • Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
    申请人:Nakagawa Hisashi
    公开号:US20070015892A1
    公开(公告)日:2007-01-18
    A method for producing a polymer includes hydrolyzing and condensing (B) a hydrolyzable-group-containing silane monomer in the presence of (A) a polycarbosilane, the polycarbosilane (A) being a polymer (I) obtained by reacting (a) a compound shown by the following general formula (1) and (b) at least one compound selected from the group consisting of a compound shown by the following general formula (2) and a compound shown by the following general formula (3) in an organic solvent in the presence of at least one of an alkali metal and an alkaline earth metal, R 1 k CX 4-k (1) R 2 k SiY 4-k (2) R 3 m Y 3-m SiCR 4 n X 3-n (3) wherein R 1 to R 4 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, k represents an integer from 0 to 3, and m and n individually represent integers from 0 to 2.
  • Diene condensation of unsaturated compounds containing the trichloromethyl or trichlorovinyl group
    作者:R. Kh. Freidlina、F. K. Velichko、A. B. Belyavskii
    DOI:10.1007/bf00912260
    日期:1960.3
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