A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.
本发明公开了一种在半导体器件等中与通过 CVD 工艺形成的涂膜具有优异附着力的半导体用叠层膜、具有该叠层膜的绝缘膜以及使用该绝缘膜的半导体用基板。叠层膜包括(A)碳含量大于等于 60%(重量百分比)的有机化合物膜和(B)通过加热至少一种选自上述通式(51)至(54)所代表的特定化合物的
水解缩合物而制备的膜。