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2-phenylquinoline-4-carbonitrile | 2973-26-4

中文名称
——
中文别名
——
英文名称
2-phenylquinoline-4-carbonitrile
英文别名
2-phenyl-4-cyanoquinoline;2-phenyl-4-quinolinecarbonitrile
2-phenylquinoline-4-carbonitrile化学式
CAS
2973-26-4
化学式
C16H10N2
mdl
——
分子量
230.269
InChiKey
RQCAKHSBRZRGHQ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    140-141 °C
  • 沸点:
    360.7±30.0 °C(Predicted)
  • 密度:
    1.23±0.1 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    3.6
  • 重原子数:
    18
  • 可旋转键数:
    1
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    36.7
  • 氢给体数:
    0
  • 氢受体数:
    2

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量
  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

点击查看最新优质反应信息

文献信息

  • Decarbonylative Synthesis of Aryl Nitriles from Aromatic Esters and Organocyanides by a Nickel Catalyst
    作者:Junichiro Yamaguchi、Keiichiro Iizumi、Miki B. Kurosawa、Ryota Isshiki、Kei Muto
    DOI:10.1055/s-0040-1705943
    日期:2021.9
    A decarbonylative cyanation of aromatic esters with aminoacetonitriles in the presence of a nickel catalyst was developed. The key to this reaction was the use of a thiophene-based diphosphine ligand, dcypt, permitting the synthesis of aryl nitrile without the generation of stoichiometric metal- or halogen-containing chemical wastes. A wide range of aromatic esters, including hetarenes and pharmaceutical
    在镍催化剂的存在下,开发了芳香酯与氨基乙腈的脱羰氰化反应。该反应的关键是使用基于噻吩的二膦配体 dcypt,允许合成芳基腈而不会产生化学计量的含金属或卤素的化学废物。多种芳香酯,包括杂环芳烃和药物分子,都可以转化为芳基腈。
  • Synthesis of New 4-Heteroaryl-2-Phenylquinolines and Their Pharmacological Activity as NK-2/NK-3 Receptor Ligands
    作者:Anna Borioni、Carlo Mustazza、Isabella Sestili、Maria Sbraccia、Luciana Turchetto、Maria Rosaria Del Giudice
    DOI:10.1002/ardp.200600113
    日期:2007.1
    Substituted 4‐heteroaryl‐2‐phenylquinolines were synthesized and tested on NK‐2 and NK‐3 receptors in order to get a better insight in the structure‐activity relationship. On the whole, these molecules, which can be regarded as bioisosters of the NK‐3 antagonist SB 218795, displayed a lower activity than the template. Ring electronic distribution and H‐bond donor and acceptor positions played some
    为了更好地了解构效关系,合成了取代的 4-杂芳基-2-苯基喹啉并在 NK-2 和 NK-3 受体上进行了测试。总的来说,这些可被视为 NK-3 拮抗剂 SB 218795 的生物电子等排体的分子显示出比模板低的活性。环电子分布和H-键供体和受体位置在选择性中起一定作用,2-咪唑基取代的2a主要对NK-3表现出亲和力,而3-吡唑基取代的4表现出与NK-2受体的优先相互作用。合成化合物的结构表征是通过核磁共振和质谱技术实现的。二维 1H-NOESY 实验是确定化合物 9 和 11b – c 的异构结构的有用工具。
  • Direct arylation for the synthesis of 2-arylquinolines from N-methoxyquinoline-1-ium tetrafluoroborate salts and arylboronic acids
    作者:Xiaoxiao Ren、Shuaijun Han、Xianying Gao、Jingya Li、Dapeng Zou、Yangjie Wu、Yusheng Wu
    DOI:10.1016/j.tetlet.2018.02.008
    日期:2018.3
    and direct arylation reaction of N-methoxyquinoline-1-ium tetrafluoroborate derivatives and arylboronic acids with high regioselectivety at room temperature was discovered. The reaction shows exceptional functional group tolerance and broad substrate scope regarding both the quinoline derivatives and the arylboronic acids.
    发现N-甲氧基喹啉-1-四氟硼酸衍生物与芳基硼酸在室温下具有快速区域选择性的快速直接芳基化反应。该反应对喹啉衍生物和芳基硼​​酸均显示出优异的官能团耐受性和广泛的底物范围。
  • CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
    申请人:Lee Wai Mun
    公开号:US20090130849A1
    公开(公告)日:2009-05-21
    A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.
    本文描述了一种化学机械平整化(或其他抛光)的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率,包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
  • METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
    申请人:Lee Wai Mun
    公开号:US20100043823A1
    公开(公告)日:2010-02-25
    The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.
    本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法,包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分,如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
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