通过选择性还原苯并[1,2- c ; 4,5- c ]合成低带隙[1,2,5]-噻二唑并[3,4- g ]喹喔啉和吡嗪并[2,3- g ]喹喔啉衍生物′]双[1,2,5]噻二唑
摘要:
可以有选择地进行二噻吩基苯并双噻二唑衍生物TBBT的还原反应,以提供[1,2,5]-噻二唑并[ 3,4- g ]喹喔啉(TQ)或吡嗪并[2,3- g ]喹喔啉(PQ)衍生物。 。与目前的方法相比,这种方法为PQ和TQ派生提供了更为温和,更短和更有效的途径。进一步显示了如何通过选择合适的取代基来调节PQ和TQ的光学和电化学性质。
One-Pot Synthesis of 4,8-Dibromobenzo[1,2-c;4,5-c′]bis[1,2,5]thiadiazole
摘要:
A one-step synthesis of 4,8-dibromobenzo[1,2-c;4,5-c']bis[1,2,5]thiadiazole with use of 1,2,4,5-tetraaminobenzene tetrahydrobromide and thionyl bromide in good yield is reported. This unit can then be used in the synthesis of low bandgap materials via palladium-catalyzed coupling reactions. The approach offers a quick and easy way to prepare low bandgap materials as compared to the current literature methods.
[EN] AN ELECTRON-DONATING UNIT, A COPOLYMER THEREOF AND THEIR PREPARATION METHODS, AS WELL AS THEIR USES<br/>[FR] MOTIF DONNEUR D'ÉLECTRONS, SON COPOLYMÈRE ET LEURS PROCÉDÉS DE PRÉPARATION, AINSI QUE LEURS UTILISATIONS
申请人:UNIV SOUTH SCIENCE & TECHNOLOGY CHINA
公开号:WO2017152354A1
公开(公告)日:2017-09-14
An electron-donating unit of the Formula, a copolymer thereof and their preparation methods, as well as their uses in thin-film transistor or polymer solar cell. The electron-donating unit is an effective building block for constructing high-performance polymer semiconductors due to its solubilizing ability, centrosymmetric geometry, backbone planarity, compact packing, and appropriate electron donating ability versus the previously reported BTOR and DTP units.
Narrow band-gap copolymers with two acceptors of benzo[1,2-c;3,4-c′]bis[1,2,5]thiadiazole and Benzo[c][1,2,5] thiadiazole: Synthesis, characteristics and application in field-effect transistors
作者:Chen Zhang、Zhihui Chen、Weixuan Zeng、Gui Yu、Chuluo Yang
DOI:10.1016/j.dyepig.2016.03.037
日期:2016.7
copolymers containing two acceptors (benzo[1,2-c;3,4-c′]bis[1,2,5] thiadiazole and benzo[c][1,2,5]thiadiazole are designed and synthesized. Two kinds of sidechains (2-octyl-1-dodecyl chain and siloxane-terminated hexyl chain) are added to the copolymer backbone. Both polymers show very narrowbandgaps of ∼1.0 eV. Bottom-gate and bottom-contact transistors based on the polymers are fabricated and exhibit
设计并合成了包含两个受体的一系列共聚物(苯并[1,2-c; 3,4-c']双[1,2,5]噻二唑和苯并[c] [1,2,5]噻二唑。在共聚物主链上添加了两种侧链(2-辛基-1-十二烷基链和硅氧烷封端的己基链),两种聚合物均显示出约1.0 eV的非常窄的带隙。制备了这些聚合物并表现出p型场效应,其空穴迁移率高达1.04×10 -2 cm 2 V -1 s -1。
Potentiometric, Electronic Structural, and Ground- and Excited-State Optical Properties of Conjugated Bis[(Porphinato)zinc(II)] Compounds Featuring Proquinoidal Spacer Units
作者:Kimihiro Susumu、Timothy V. Duncan、Michael J. Therien
DOI:10.1021/ja040243h
日期:2005.4.1
We report the synthesis, optical, electrochemical, electronic structural, and transient optical properties of conjugated (porphinato)zinc(II)-spacer-(porphinato)zinc(II) (PZn-Sp-PZn) complexes that possess intervening conjugated Sp structures having varying degrees of proquinoidal character. These supermolecular PZn-Sp-PZn compounds feature Sp moieties (4,7-diethynylbenzo[c][1,2,5]thiadiazole (E-BTD-E)
New low band gap 2-(4-(trifluoromethyl)phenyl)-1H-benzo[d]imidazole and benzo[1,2-c;4,5-c′]bis[1,2,5]thiadiazole based conjugated polymers for organic photovoltaics
作者:M. G. Murali、Arun D. Rao、Praveen C. Ramamurthy
DOI:10.1039/c4ra08214a
日期:——
Two new low band gap D–A structured conjugated polymers, PBDTTBI and PBDTBBT, based on 2-(4-(trifluoromethyl)phenyl)-1H-benzo[d]imidazole and benzo[1,2-c;4,5-c′]bis[1,2,5]thiadiazole acceptor units with benzo[1,2-b;3,4-b′]dithiophene as a donor unit have been designed and synthesized via a Stille coupling reaction. The incorporation of the benzo[1,2-c;4,5-c′]bis[1,2,5]thiadiazole unit into PBDTBBT
两个新的低带隙d-结构化共轭聚合物,PBDTTBI和PBDTBBT,基于2-(4-(三氟甲基)苯基)-1 ħ -苯并[ d ]咪唑基和苯并[1,2 Ç ; 4,5-通过Stille偶联反应设计并合成了以苯并[1,2- b ; 3,4- b ']二噻吩为供体的c '] bis [1,2,5]噻二唑受体单元。将苯并[1,2- c ; 4,5- c ']双[1,2,5]噻二唑单元并入PBDTBBT显着改变了聚合物的光学和电化学性能。对于PBDTTBI和PBDTBBT,从开始吸收边缘估计的光学带隙分别为〜1.88eV和〜1.1eV。观察到PBDTBBT表现出更强的HOMO能级(-4.06 eV),且具有强大的分子内电荷转移相互作用。使用ITO / PEDOT:PSS / PBDTBBT:PC 71 BM / Al构造的块状异质结太阳能电池表现出0.67%的最佳功率转换效率,短路电流密度为4.9 mA