Yttrium acetate | 23363-14-6

• 物质功能分类: 有机原料 - 有机金属类化合物 - 有机铋、钴、镨、钆、镓、铱、铼、钇、铽等
• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: Yttrium acetate
• 英文别名: yttrium(3+);triacetate
• CAS: 23363-14-6
• 化学式: C6H9O6Y
• 分子量: 266.04
• InChiKey: JUWHRRAPBUAYTA-UHFFFAOYSA-K

物化性质

• 熔点：
  285°C
• 密度：
  1-1.5

计算性质

• 辛醇/水分配系数(LogP)：
  -3.73
• 重原子数：
  13
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  120
• 氢给体数：
  0
• 氢受体数：
  6

ADMET

毒理性

• 副作用

纤维原性 - 引发组织损伤和纤维化（疤痕形成）。

Fibrogenic - Inducing tissue injury and fibrosis (scarring).

来源:Haz-Map, Information on Hazardous Chemicals and Occupational Diseases

安全信息

• TSCA：
  Yes
• 危险品标志：
  Xi
• 安全说明：
  S26,S36/37/39
• 危险类别码：
  R36/37/38

制备方法与用途

用途

科研试剂、生化研究

生产方法

1. 取10g 氧化钇加入500mL 50%乙酸溶液中，用蒸汽浴加热。通常氧化钇可完全溶解，但有时会有少许未反应的氧化物残留在容器底部，则需过滤。滤液置于75℃水浴上加热以蒸去大部分溶剂。冷却后，晶体析出。收集晶体，并将其移至玻璃皿中，在装有粒状氢氧化钠及高氯酸镁的真空干燥器中抽真空进行干燥，得到水合醋酸钇。将水合醋酸钇放在真空干燥箱中于150℃干燥至恒重，最终得到醋酸钇。

2. 取上一步法制得的水合醋酸钇10g放入500mL圆底烧瓶中，加入无水DMF 100mL，振摇，待醋酸盐溶解后，再加入无水苯150mL。蒸馏除去苯-水共沸物，醋酸钇与DMF络合物（Y（CH3COO）3·DMF）析出。滤集结晶，并用无水乙醚洗涤。将结晶放在装有无水氯化钙和五氧化二磷的干燥器中保存。最后将晶体放在真空干燥箱或阿布得哈顿干燥器中，在抽真空条件下于210℃加热除去DMF，制得醋酸钇。

反应信息

• 作为反应物：
  描述：

  Yttrium acetate 生成 yttrium Oxide
  参考文献：
  名称：

  HARTMANN, W.;LIU, A. T.;PEUCKERT, D.;KLEINSCHMIT, P., CERAM. MATER. RES., AMSTERDAM ETC.,(1989) C. 243-246

  摘要：

  DOI：
• 作为产物：
  描述：

  溶剂黄146 生成 Yttrium acetate
  参考文献：
  名称：

  UTIDA, FUMIO;YADZAKI, TATSUO

  摘要：

  DOI：

文献信息

• Barrier layer arrangement for conductive layers on silicon substrates
  申请人：Eastman Kodak Company

  公开号：US04908348A1

  公开（公告）日：1990-03-13

  A barrier layer triad intended to protect a silicon substrate and an overlying conductive layer from mutual contamination is disclosed as well as a process for its preparation. The barrier layer triad is comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of at least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.

  本发明揭示了一种用于保护硅衬底和上层导电层不互相污染的屏障层三元组，以及其制备方法。该屏障层三元组由三个层组成，第一个三元组层位于硅衬底旁边，主要由二氧化硅组成；第三个三元组层远离硅衬底，主要由至少一种第四族重金属氧化物组成；第二个三元组层位于第一个和第三个三元组层之间，主要由二氧化硅和至少一种第四族重金属氧化物的混合物组成。
• Spray-dried inorganic oxides from non-aqueous gels or solutions
  申请人：Allied Corporation

  公开号：US04649037A1

  公开（公告）日：1987-03-10

  Inorganic metal oxides having high surface area and pore volume are prepared by spray drying. The admixture which is spray dried to yield the metal oxides is produced from reactants comprising at least one hydrolyzable metal compound, a sufficient amount of water to at least partially hydrolyze the metal compound and an organic solvent. The admixture is supplied as a plurality of droplets to a reaction zone operated under conditions of temperature and pressure below the critical temperature and pressure of the reactants but sufficient to produce a product comprising metal oxide powders and a gas comprising organic solvent vapors. The powders are separated from the gas in a known fashion and collected. Spray drying of non-aqueous systems unexpectedly produces metal oxides having properties generally intermediate conventionally produced oxides and aerogels.

  通过喷雾干燥制备具有高比表面积和孔体积的无机金属氧化物。用于产生金属氧化物的喷雾干燥混合物由至少一种可水解金属化合物、足够的水至少部分水解金属化合物和一种有机溶剂组成。该混合物作为多个液滴提供给反应区，在温度和压力条件下操作，这些条件低于反应物的临界温度和压力，但足以产生金属氧化物粉末和含有有机溶剂蒸气的气体。粉末以已知的方式与气体分离并收集。非水系统的喷雾干燥意外地产生了性质通常介于常规产生的氧化物和气凝胶之间的金属氧化物。
• Method of forming a barrier layer arrangement for conductive layers on
  申请人：Eastman Kodak Company

  公开号：US04994434A1

  公开（公告）日：1991-02-19

  A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct interaction with the substrate. A silica layer of at least 2000 .ANG. in thickness is deposited on the silicon substrate, and followed by deposition on the silica layer of a Group 4 heavy metal to form a layer having a thickness in the range of from 1500 to 3000 .ANG.. Heating the layers in the absence of a reactive atmosphere to permit oxygen migration from the silica layer forms a barrier layer triad consisting of a silica first triad layer located adjacent the silicon substrate, a heavy Group 4 metal oxide third triad layer remote from the silicon substrate, and a Group 4 heavy metal silicide second triad layer interposed between the first and third triad layers.

  公开了一种在晶体硅基底上制备屏障层三元组的方法，该三元组能够保护稀土碱土铜氧导电涂层免受与基底的直接相互作用。首先，在硅基底上沉积至少2000 .ANG.厚度的二氧化硅层，然后在二氧化硅层上沉积第4族重金属，形成厚度在1500至3000 .ANG.范围内的层。在无反应气氛中加热层，以允许氧从二氧化硅层迁移，形成由硅第一三元组层、重第4族金属硅酸盐第二三元组层和远离硅基底的第4族重金属氧化物第三三元组层组成的屏障层三元组。
• Barrier layer containing conductive articles
  申请人：Eastman Kodak Company

  公开号：US05017551A1

  公开（公告）日：1991-05-21

  A circuit element is disclosed comprised of a substrate and an electrically conductive layer located on the substrate. The electrically conductive layer is comprised of a crystalline rare earth alkaline earth copper oxide. The substrate is formed of a material which increases the electrical resistance of the conductive layer when in contact with the rare earth alkaline earth copper oxide during crystallization of the latter to an electrically conductive form. A barrier layer is interposed between the electrically conductive layer and the substrate. The barrier layer contains magnesium, a group IVA metal, or a platinum group metal, either in an elemental state or in the form of an oxide or silicide. The circuit element is produced by first forming the barrier layer on the substrate followed by coating conductor precursor metal-ligand compounds of each of rare earth, alkaline earth, and copper containing at least one thermally volatilizable ligand and heating the precursor metal-ligand compounds in the presence of oxygen to produce a crystalline rare earth alkaline earth copper oxide electrically conductive layer.

  本文披露了一种电路元件，包括基底和位于基底上的电性导体层。该电性导体层由结晶稀土碱土铜氧化物组成。基底由一种材料形成，当与稀土碱土铜氧化物接触并结晶成电性导体形式时，增加了导体层的电阻。在电性导体层和基底之间插入了一层障碍层。该障碍层含有镁、IVA族金属或铂族金属，可以是元素状态或氧化物或硅化物形式。该电路元件的制造方法是首先在基底上形成障碍层，然后涂覆含有稀土、碱土和铜的导体前体金属-配体化合物，其中至少含有一种热挥发性配体，并在氧气存在下加热前体金属-配体化合物，以产生结晶稀土碱土铜氧化物电性导体层。
• Dense star polymer conjugates
  申请人：The Dow Chemical Company

  公开号：US05527524A1

  公开（公告）日：1996-06-18

  Dense star polymer conjugates which are composed of at least one dendrimer in association with at least one unit of a carried agricultural, pharmaceutical, or other material have been prepared. These conjugates have particularly advantageous properties due to the unique characteristics of the dendrimer.

  已经制备了由至少一种树状分子与至少一种携带农业、制药或其他物质的单元组成的致密星形聚合物共轭物。由于树状分子的独特特性，这些共轭物具有特别优越的性质。

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