2-(4-tert-Butylphenyl)-3-methyl-2-butanol

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: 2-(4-tert-Butylphenyl)-3-methyl-2-butanol
• 英文别名: 2-(4-Butan-2-ylphenyl)-3-methylbutan-2-ol；2-(4-butan-2-ylphenyl)-3-methylbutan-2-ol
• 化学式: C₁₅H₂₄O
• 分子量: 220.355
• InChiKey: WMSYYIQVBOSIFP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.3
• 重原子数：
  16
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.6
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  2-(4-tert-Butylphenyl)-3-methyl-2-butanol 在 氢溴酸 、 溶剂黄146 、 锌 作用下， 以11%的产率得到D,L-3,4-Bis(4-tert-butylphenyl)-2,3,4,5-tetramethylhexan
  参考文献：
  名称：

  Kratt, Guenter; Beckhaus, Hans-Dieter; Lindner, Hans Joerg, Chemische Berichte, 1983, vol. 116, # 9, p. 3235 - 3263

  摘要：

  DOI：
• 作为产物：
  描述：

  叔丁基苯 在 三氯化铝 作用下， 以 乙醚 、 1,2-二氯乙烷 为溶剂， 反应 1.0h， 生成 2-(4-tert-Butylphenyl)-3-methyl-2-butanol
  参考文献：
  名称：

  Kratt, Guenter; Beckhaus, Hans-Dieter; Lindner, Hans Joerg, Chemische Berichte, 1983, vol. 116, # 9, p. 3235 - 3263

  摘要：

  DOI：

文献信息

• CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180180998A1

  公开（公告）日：2018-06-28

  A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

  提供一种负型光刻胶组合物，包括具有公式(A)的磺化物化合物和基础聚合物。该光刻胶组合物在图案形成期间表现出高分辨率，并形成具有最小LER的图案。
• SHRINK MATERIAL AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160161851A1

  公开（公告）日：2016-06-09

  A shrink material is provided comprising a polymer comprising recurring units of formula (1) and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.
• SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160229939A1

  公开（公告）日：2016-08-11

  The present invention provides a silicon-containing polymer which contains a repeating unit shown by the general formula (1-3) and one or more repeating units selected from repeating units shown by the general formulae (1-1) and (1-2) as a partial structure. There can be provided a composition for forming a silicon-containing resist under layer film, and a silicon-containing polymer and a silicon-containing compound to give the composition that is capable of forming a resist under layer film improved in adhesiveness in any resist pattern, regardless of negative development or positive development.
• NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160299430A1

  公开（公告）日：2016-10-13

  A negative resist composition is provided comprising (A) a polymer comprising recurring units having an acid-eliminatable group and recurring units capable of generating acid upon exposure and (B) a carboxylic acid onium salt. When the negative resist composition is processed by the microprocessing technology, especially EB lithography, it forms a pattern having a very high resolution and minimal LER.
• PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK
  申请人：FUJIFILM Corporation

  公开号：US20170121437A1

  公开（公告）日：2017-05-04

  A pattern forming method includes forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, exposing the film with active light or radiation, and developing the exposed film using a developer including an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by General Formula (I).