COMPOUND HAVING INDENOACRIDAN RING STRUCTURE, AND ORGANIC ELECTROLUMINESCENT DEVICE
申请人:Hodogaya Chemical Co., Ltd.
公开号:US20150249218A1
公开(公告)日:2015-09-03
An organic compound with excellent characteristics excelling in hole injecting and transporting performance and having an electron-blocking ability, high stability in a thin film state and excellent heat resistance is provided as a material for an organic electroluminescent device of high efficiency and high durability, and the organic electroluminescent device of high luminous efficiency and high durability is provided using this compound. The compound of a general formula (1) having an indenoacridan ring structure is used as a constituent material of at least one organic layer in the organic electroluminescent device that includes a pair of electrodes and one or more organic layers sandwiched between the pair of electrodes.
Photoelectric conversion material, film containing the material, photoelectric conversion device, method for preparing photoelectric conversion device, method for using photoelectric conversion device, photosensor and imaging device
申请人:FUJIFILM CORPORATION
公开号:US09349965B2
公开(公告)日:2016-05-24
There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol−1·l·cm−1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point−a deposition temperature) is 31° C. or more.
PHOTOELECTRIC CONVERSION MATERIAL, FILM CONTAINING THE MATERIAL, PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR PREPARING PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR USING PHOTOELECTRIC CONVERSION DEVICE, PHOTOSENSOR AND IMAGING DEVICE
申请人:FUJIFILM CORPORATION
公开号:US20130181202A1
公开(公告)日:2013-07-18
There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol
−1
·l·cm
−1
or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point−a deposition temperature) is 31° C. or more.
PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR USING THE SAME, IMAGING DEVICE, PHOTOSENSOR, AND COMPOUND
申请人:FUJIFILM Corporation
公开号:US20140374733A1
公开(公告)日:2014-12-25
An object of the present invention is to provide a photoelectric conversion element having a photoelectric conversion film which exhibits heat resistance, a high photoelectric conversion efficiency, a low level of dark currents, rapid response, and sensitivity characteristics to red and can be produced by a vapor deposition processing that is continuously performed under a high-temperature condition. The photoelectric conversion element of the present invention is a photoelectric conversion element in which a conductive film, a photoelectric conversion film containing a photoelectric conversion material, and a transparent conductive film are laminated on one another in this order, wherein the photoelectric conversion material includes a compound represented by Formula (1).