HALOGENATED ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME
申请人:Xiao Manchao
公开号:US20130078392A1
公开(公告)日:2013-03-28
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:
X
m
R
1
n
H
p
Si(NR
2
R
3
)
4-m-n-p
I
wherein X is selected from Cl, Br, I; R
1
is selected from linear or branched C
1
-C
10
alkyl group, a C
2
-C
12
alkenyl group, a C
2
-C
12
alkynyl group, a C
4
-C
10
cyclic alkyl, and a C
6
-C
10
aryl group; R
2
is selected from a linear or branched C
1
-C
10
alkyl, a C
3
-C
12
alkenyl group, a C
3
-C
12
alkynyl group, a C
4
-C
10
cyclic alkyl group, and a C
6
-C
10
aryl group; R
3
is selected from a branched C
3
-C
10
alkyl group, a C
3
-C
12
alkenyl group, a C
3
-C
12
alkynyl group, a C
4
-C
10
cyclic alkyl group, and a C
6
-C
10
aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R
2
and R
3
are linked or not linked to form a ring.
本发明描述了用于形成薄膜的前体和方法。在一个方面,提供了一种具有公式I的前体:
X
m
R
1
n
H
p
Si(NR
2
R
3
)
4-m-n-p
I
其中,X选自Cl、Br、I;R
1
选自直链或支链的C
1
-C
10
烷基、C
2
-C
12
烯基、C
2
-C
12
炔基、C
4
-C
10
环烷基和C
6
-C
10
芳基;R
2
选自直链或支链的C
1
-C
10
烷基、C
3
-C
12
烯基、C
3
-C
12
炔基、C
4
-C
10
环烷基和C
6
-C
10
芳基;R
3
选自支链的C
3
-C
10
烷基、C
3
-C
12
烯基、C
3
-C
12
炔基、C
4
-C
10
环烷基和C
6
-C
10
芳基;m为1或2;n为0、1或2;p为0、1或2;且m+n+p小于4,其中R
2
和R
3
可以相连或不相连形成环。