摩熵化学
数据库官网
小程序
打开微信扫一扫
首页 分子通 化学资讯 化学百科 反应查询 关于我们
请输入关键词

2-[[7-(4-Tert-butylphenyl)-12,12-dimethylbenzo[a]acridin-3-yl]methylidene]cyclopenta[b]naphthalene-1,3-dione | 1269935-87-6

中文名称
——
中文别名
——
英文名称
2-[[7-(4-Tert-butylphenyl)-12,12-dimethylbenzo[a]acridin-3-yl]methylidene]cyclopenta[b]naphthalene-1,3-dione
英文别名
——
2-[[7-(4-Tert-butylphenyl)-12,12-dimethylbenzo[a]acridin-3-yl]methylidene]cyclopenta[b]naphthalene-1,3-dione化学式
CAS
1269935-87-6
化学式
C43H35NO2
mdl
——
分子量
597.756
InChiKey
MOXFPVWNOWKYJJ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    11.8
  • 重原子数:
    46
  • 可旋转键数:
    3
  • 环数:
    8.0
  • sp3杂化的碳原子比例:
    0.16
  • 拓扑面积:
    37.4
  • 氢给体数:
    0
  • 氢受体数:
    3

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

点击查看最新优质反应信息

文献信息

  • Compounds for use in a photoelectric conversion material, and intermediates for the preparation thereof
    申请人:Fujifilm Corporation
    公开号:EP2786983A1
    公开(公告)日:2014-10-08
    The invention provides a compound represented by the following formula (V): Also claimed are compounds of formula (I) which are useful as a photoelectric conversion material. The aldehydes of formula (V) are intermediates in the preparation of compounds of formula (I).
    本发明提供了由下式(V)代表的化合物: 本发明还涉及可用作光电转换材料的式 (I) 化合物。式(V)的醛是制备式(I)化合物的中间体。
  • Photoelectric conversion material, film containing the material, photoelectric conversion device, production method thereof, photosensor, imaging device and their use methods
    申请人:Fujifilm Corporation
    公开号:EP2292586B1
    公开(公告)日:2018-01-17
  • PHOTOELECTRIC CONVERSION MATERIAL, FILM CONTAINING THE MATERIAL, PHOTOELECTRIC CONVERSION DEVICE, PRODUCTION METHOD THEREOF, PHOTOSENSOR, IMAGING DEVICE AND THEIR USE METHODS
    申请人:HAMANO Mitsumasa
    公开号:US20110056562A1
    公开(公告)日:2011-03-10
    A compound represented by the following formula (I), and a photoelectric conversion device containing the compound: wherein Z 1 is a ring containing two carbon atoms and represents a 5-membered ring, a 6-membered ring or a condensed ring containing at least either a 5-membered ring or a 6-membered ring, each of L 1 , L 2 and L 3 independently represents an unsubstituted methine group or a substituted methine group, n represents an integer of 0 or more, each of R 1 , R 2 , R 3 , R 4 , R 5 and R 6 independently represents a hydrogen atom or a substituent, R 1 and R 2 , R 2 and R 3 , R 4 and R 5 , or R 5 and R 6 may be combined with each other to form a ring, and each of R 21 and R 22 independently represents a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group or an unsubstituted heteroaryl group, provided that the case where both R 21 and R 22 are an unsubstituted phenyl group is excluded.
  • PHOTOELECTRIC CONVERSION DEVICE, PRODUCTION METHOD THEREOF, PHOTOSENSOR, IMAGING DEVICE AND THEIR DRIVE METHODS
    申请人:NOMURA Kimiatsu
    公开号:US20110063485A1
    公开(公告)日:2011-03-17
    A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.
  • PHOTOELECTRIC CONVERSION MATERIAL, FILM CONTAINING THE MATERIAL, PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR PREPARING PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR USING PHOTOELECTRIC CONVERSION DEVICE, PHOTOSENSOR AND IMAGING DEVICE
    申请人:FUJIFILM CORPORATION
    公开号:US20130181202A1
    公开(公告)日:2013-07-18
    There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol −1 ·l·cm −1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point−a deposition temperature) is 31° C. or more.
查看更多