Photochemical Formation and Reactivities of Substituted Oxathiiranes in Low-Temperature Argon Matrices
作者:Hans Peter Reisenauer、Grzegorz Mloston、Jaroslaw Romanski、Peter R. Schreiner
DOI:10.1002/ejoc.201100695
日期:2011.11
thioketones were irradiated in argon matrices at 10 K, and the resulting oxathiiranes were identified by comparison of computed and experimental IR spectra. Upon photolysis at 10 K, depending on the substitution pattern, the oxathiiranes underwent either H-shift reactions or regioselective ring enlargements to form the corresponding thioesters. After warming of the matrix material to 38–40 K, the oxathiiranes
衍生自脂肪族和脂环族硫酮的硫代羰基 S-氧化物(亚砜)在 10 K 的氩基质中进行辐照,并通过计算和实验红外光谱的比较来鉴定所得氧硫杂环丙烷。在 10 K 光解后,根据取代模式,氧杂环丙烷经历 H 位移反应或区域选择性环扩大以形成相应的硫酯。将基体材料加热到 38-40 K 后,氧杂环丙烷进行快速脱硫以产生相应的酮。B3LYP/6-311+G(3df,3pd) 水平的密度泛函理论 (DFT) 计算表明氧硫杂环丁烷的脱硫作为双分子过程发生,活化焓接近 0 kcal mol–1。