A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent, and a fluid comprising a reducing agent in a reaction pot at a first temperature to form a liquid comprising assembly; increasing the temperature of the assembly to a sufficient-temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals; and growing the plurality of metal chalcogenide nanocrystals without injection of either the metal source or the chalcogen oxide at a temperature equal to or greater than the sufficient-temperature, wherein crystal growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. Well controlled monodispersed CdSe nanocrystals of various sizes can be prepared by choice of the metal source and solvent system.
一种制备单分散
金属
硫属化物纳米晶体的方法,不需要前驱体注入,包括以下步骤:在第一温度下将
金属源、
硫属氧化物或
硫属氧化物等效物和包含还原剂的流体组合在反应罐中形成液态组合物;将组合物的温度升高到足够的温度以启动成核形成多个
金属
硫属化物纳米晶体;在等于或高于足够温度的温度下生长多个
金属
硫属化物纳米晶体,而不注入
金属源或
硫属氧化物,其中晶体生长在很大程度上在没有成核的情况下进行,形成多个单分散
金属
硫属化物纳米晶体。通过选择
金属源和溶剂系统,可以制备各种尺寸的良好控制的单分散CdSe纳米晶体。