2,2,6,6-tetramethyl-3,5-heptandion-copper

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 2,2,6,6-tetramethyl-3,5-heptandion-copper
• 英文别名: Copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate)；copper;2,2,6,6-tetramethylheptane-3,5-dione
• 化学式: C₂₂H₄₀CuO₄
• 分子量: 432.103
• InChiKey: LJNKLCWPWAPYME-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.21
• 重原子数：
  27
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.82
• 拓扑面积：
  68.3
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  yttrium(III) (dipivaloylmethanate)3 、 2,2,6,6-tetramethyl-3,5-heptandion-copper 、 2,2,6,6-tetramethyl-3,5-heptandion-barium 在 air 作用下， 以 gaseous matrix 为溶剂， 生成 yttrium barium copper oxide
  参考文献：
  名称：

  In-situ growth of Y1Ba2Cu3O7−x thin films directly on sapphire by temperature-controlled chemical vapor deposition

  摘要：

  A temperature-controlled chemical vapor deposition (TC-CVD) process was developed for in-situ growth of highly c-axis orientated Y1Ba2Cu3O7+x (YBCO) thin films directly on sapphire substrates. This new CVD process, for the first time, uses programmable temperature controllers to optimize and tailor the qualities of deposited YBCO films by precisely control the temperatures of substrates and source compounds in pre-determined temperature profiles. By employing a substrate temperature (T(s)) ramping from T(s) (high) of 825-degrees-C to T(s) (low) of 735-degrees-C during deposition, we were able to grow highest T(c) and J(c) YBCO thin films on sapphire without buffer layer. DC transport four point measurement on the as-deposited films gave a T(c(onset)) at 92 K and T(c(zero)) at 84 K. Critical current density of 4 x 10(4) A/cm2 at 77 K and zero magnetic field was obtained for the films. The as-deposited films were also characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

  DOI：

  10.1016/0921-4534(92)90875-d
• 作为试剂：
  描述：

  3-(4-bromophenyl)-1,4-diazaspiro[4.4]non-3-en-2-one 、 4,5-二甲基-1H-咪唑 、 potassium tert-butylate 、 咪唑 在 2,2,6,6-tetramethyl-3,5-heptandion-copper 氩 、 乙酸乙酯 、 magnesium sulfate 、 甲醇 、 ammonia methanol 作用下， 以 N,N-二甲基甲酰胺 、 碳酸氢钠 、 乙酸乙酯 、 methanol-dichloromethane 为溶剂， 反应 132.08h， 生成 3-[4-(4,5-dimethyl-1H-imidazol-1-yl)phenyl]-1,4-diazaspiro[4.4]non-3-en-2-one
  参考文献：
  名称：

  SPIRO-CONDENSED IMIDAZOLONE DERIVATIVES INHIBITING THE GLYCINE TRANSPORTER

  摘要：

  提供公式（I）的化合物及其盐：其中，所述基团如说明书所定义。还公开了将该化合物用作药物的用途以及用于制造治疗神经和神经精神障碍，特别是精神病、痴呆或注意力缺陷障碍的药物。本发明还包括制备这些化合物和药物制剂的过程。

  公开号：

  US20100317704A1

文献信息

• Superconducting properties of Ba₂YCu₃O_7−<i>x</i>thin films prepared by chemical vapor deposition on SrTiO₃and a metal substrate
  作者：Taichi Yamaguchi、Shinya Aoki、Nobuyuki Sadakata、Osamu Kohno、Hiroshi Osanai

  DOI：10.1063/1.102311

  日期：1989.10.9

  Superconducting Ba2 YCu3 O7−x thin films were prepared by chemical vapor deposition using β‐diketonate chelates on SrTiO3 single crystalline substrates, metal substrates, and metal substrates with a polycrystalline SrTiO3 buffer. The temperatures of complete superconducting transitions were observed at 89, 81, and 84 K, respectively. Reduced critical current density of the film on a single crystalline

  在 SrTiO3 单晶衬底、金属衬底和具有多晶 SrTiO3 缓冲液的金属衬底上，使用 β-二酮酸盐螯合物通过化学气相沉积制备超导 Ba2 YCu3 O7-x 薄膜。分别在 89、81 和 84 K 处观察到完全超导转变的温度。在 77 K 时高达 600 mT 的磁场中，单晶基板上薄膜的临界电流密度降低，但仍比粉末冶金加工样品的临界电流密度高一两个数量级。根据 X 射线衍射图，在所有样品中都证实存在取向良好的正交 Ba2 YCu3 O7-x 结构。
• Process for the generation of metal-containing films
  申请人：BASF SE

  公开号：US11319332B2

  公开（公告）日：2022-05-03

  A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

  一种工艺，包括使固体基质与气态的通式(I)、(II)、(III)或(IV)化合物接触 其中 A 是 NR2 或 OR，R 是烷基、烯基、芳基或硅烷基、 E 是 NR 或 O、 n 是 0、1 或 2，m 是 0、1 或 2，以及 R′ 是氢、烷基、烯基、芳基或硅烷基。
• In-situ growth of Y1Ba2Cu3O7−x thin films directly on sapphire by temperature-controlled chemical vapor deposition
  作者：Aiguo Feng、Li Luo、J. Martin、C.J. Maggiore

  DOI：10.1016/0921-4534(92)90875-d

  日期：1992.4

  A temperature-controlled chemical vapor deposition (TC-CVD) process was developed for in-situ growth of highly c-axis orientated Y1Ba2Cu3O7+x (YBCO) thin films directly on sapphire substrates. This new CVD process, for the first time, uses programmable temperature controllers to optimize and tailor the qualities of deposited YBCO films by precisely control the temperatures of substrates and source compounds in pre-determined temperature profiles. By employing a substrate temperature (T(s)) ramping from T(s) (high) of 825-degrees-C to T(s) (low) of 735-degrees-C during deposition, we were able to grow highest T(c) and J(c) YBCO thin films on sapphire without buffer layer. DC transport four point measurement on the as-deposited films gave a T(c(onset)) at 92 K and T(c(zero)) at 84 K. Critical current density of 4 x 10(4) A/cm2 at 77 K and zero magnetic field was obtained for the films. The as-deposited films were also characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).
• PROCESS FOR THE GENERATION OF METAL-CONTAINING FILMS
  申请人：BASF SE

  公开号：US20210079520A1

  公开（公告）日：2021-03-18

  Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR 2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.