About the participation of σ, π and n orbitals in the solvolysis of 2- and 3-oxo-1-norbornyl triflates
作者:Antonio García Martínez、JoséOsío Barcina、Enrique Teso Vilar
DOI:10.1016/0040-4020(96)00845-9
日期:1996.10
The solvolysis of 3,3-dimethyl-2-oxo- and 2,2-dimethyl-3-oxo-1-norbornyl triflates (6 and 8) takes place with formation of ring contracted and fragmented products respectively. The effect of the substituents on the solvolysis rates is explained taking into account n- and σ-participation. This n,σ-participation causes changes in the structure and stability of the intermediate carbocations, which can
MATERIAL FOR FORMING PROTECTIVE FILM AND METHOD FOR FORMING PHOTORESIST PATTERN
申请人:YOSHIDA Masaaki
公开号:US20110065053A1
公开(公告)日:2011-03-17
The present invention provides a material for forming a protective film that has favorable alkali solubility and gives a protective film excelling in water repellency, as well as a method for forming a photoresist pattern using this material for forming a protective film. The material for forming a protective film of the present invention contains an alkali-soluble polymer having a unit derived from a monomer represented by the following general formula (A-1) as a constitutional unit.
In the general formula (A-1), R
1
is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or the like; R
2
, R
3
, and R
4
are each independently an alkylene chain having 1 to 6 carbon atoms or the like; R
5
and R
6
are each independently an alkyl group or fluoroalkyl group having 1 to 15 carbon atoms or the like; and at least one of R
5
and R
6
is a fluoroalkyl group; Z is an alkylene chain having 1 to 2 carbon atoms or an oxygen atom; m is 0 or 1; and n is an integer of 0 to 3.