N,N’-(亚甲基双-P-苯基)双(氮丙啶-1-甲酰胺) | 7417-99-4

• 物质功能分类: 有机原料 - 氨基化合物 - 酰胺类化合物
• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: N,N’-(亚甲基双-P-苯基)双(氮丙啶-1-甲酰胺)
• 中文别名: N,N'-(亚甲基双-P-苯基)双(氮丙啶-1-甲酰胺)；N,N-(亚甲基双-P-苯基)双(氮丙啶-1-甲酰胺)；N,N"-(亚甲基-4,1-二亚苯基)二-1-氮杂环丙酰胺
• 英文名称: bis-[4-(aziridine-1-carbonylamino)-phenyl]-methane
• 英文别名: Bis-[4-(aziridin-1-carbonylamino)-phenyl]-methan；N,N'-(methylenedi-p-phenylene)bis(aziridine-1-carboxamide)；bis(4-(1-aziridinylcarbonylamino)phenyl)methane；bis[4-(1-aziridinylcarbonylamino)phenyl]methane；4,4'-methylene bis(phenyl-N,N-ethyleneurea)；1-Aziridinecarboxamide, N,N'-(methylenedi-4,1-phenylene)bis-；N-[4-[[4-(aziridine-1-carbonylamino)phenyl]methyl]phenyl]aziridine-1-carboxamide
• CAS: 7417-99-4
• 化学式: C₁₉H₂₀N₄O₂
• 分子量: 336.393
• InChiKey: XECQDYXJWMHGBI-UHFFFAOYSA-N

物化性质

• 熔点：
  168-169 °C(Solv: ethanol (64-17-5))
• 沸点：
  550.74℃[at 101 325 Pa]
• 密度：
  1.426±0.06 g/cm3(Predicted)
• LogP：
  2.57

计算性质

• 辛醇/水分配系数(LogP)：
  1.8
• 重原子数：
  25
• 可旋转键数：
  4
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.26
• 拓扑面积：
  64.2
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  N,N’-(亚甲基双-P-苯基)双(氮丙啶-1-甲酰胺) 在 盐酸 作用下， 生成 1,1'-(methylenedi-p-phenylene)bis[3-(2-chloroethyl)-urea]
  参考文献：
  名称：

  潜在的抗癌药的合成。XXXVI。N-亚硝基脲。二。卤代烷基衍生物。

  摘要：

  DOI：

  10.1021/jm00324a026
• 作为产物：
  描述：

  乙烯亚胺 、 4,4'-二苯甲烷二异氰酸酯、2,4'-二苯甲烷二异氰酸酯和2,2'-二苯甲烷二异氰酸酯的混合物 在 丙酮 作用下， 生成 N,N’-(亚甲基双-P-苯基)双(氮丙啶-1-甲酰胺)
  参考文献：
  名称：

  Bestian, Justus Liebigs Annalen der Chemie, 1950, vol. 566, p. 210,231

  摘要：

  DOI：

文献信息

• MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210286266A1

  公开（公告）日：2021-09-16

  The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10 , and R 1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q 1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X 1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R 2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

  本发明是一种用于形成有机薄膜的材料，包括：由以下通用式（1）所示的化合物；和有机溶剂，在通用式（1）中，X代表具有2至50个碳原子或一个氧原子的价为“n”的有机基团，“n”表示1到10的整数，R1独立地表示以下通用式（2）中的任何一种，其中在通用式（2）中，虚线表示连接点到X，Q1表示含有羰基的一价有机基团，其中至少部分是以下通用式（3）所示的基团，其中在通用式（3）中，虚线表示连接点，X1表示单键或具有1到20个碳原子的二价有机基团，在有机基团具有芳香环时可选地具有取代基，R2表示氢原子、甲基基团、乙基基团或苯基团，**表示连接点。本发明的目的是提供一种用于形成具有干法刻蚀抗性的有机薄膜的材料，同时具有高填充和平整化性能以及对基底的粘附性。
• N,N'-DIARYLUREA DERIVATIVE, MANUFACTURING METHOD THEREOF, AND THERMOSENSITIVE RECORDING MATERIAL USING SAME
  申请人：SANKO CO., LTD.

  公开号：US20210340099A1

  公开（公告）日：2021-11-04

  The present invention relates to an N,N′-diurea derivative represented by the following general formula (1) and a method for producing the same. In addition, the present invention relates to a thermosensitive recording material in which a thermosensitive recording layer including a basic dye which is colorless or lightly colored at room temperature and a developer capable of developing color upon contact with the basic dye by heating is provided on a base sheet, wherein the developer is the N,N′-diurea derivative represented by the following general formula (1): (wherein R2 is an alkyl group, an aralkyl group, or an aryl group; and A 1 is a hydrogen atom or an alkyl group).

  本发明涉及一种由以下一般式（1）表示的N,N′-二脲衍生物以及其制备方法。此外，本发明涉及一种热敏记录材料，其中在基底纸上提供了一个热敏记录层，该热敏记录层包括在室温下无色或轻染色的碱性染料和一种与碱性染料接触加热后能够显色的显色剂，其中显色剂为以下一般式（1）表示的N,N′-二脲衍生物：（其中R2为烷基、芳基烷基或芳基；A1为氢原子或烷基）。
• COMPOUND, COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR APPARATUS, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20190300498A1

  公开（公告）日：2019-10-03

  A compound including two or more partial structures shown by the following general formula (1-1) in the molecule, wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.

  该化合物包括分子中由以下一般式（1-1）所示的两个或更多个部分结构，其中每个Ar独立地表示一个芳香环，可以具有取代基，或者是一个含有至少一个氮原子的芳香环，可以具有取代基，两个Ar可以选择地彼此连接以形成一个环结构；虚线代表与有机基团的键合；B代表一种能够由于热和酸的作用而形成反应性阳离子的阴离子离去基团。这提供了一种能够在空气或惰性气体中的成膜条件下固化而不形成副产物的化合物，并形成具有良好干法刻蚀耐久性的有机底层膜，在衬底加工过程中不仅具有填隙和平坦化在衬底上形成的图案的优异特性。
• RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20180284615A1

  公开（公告）日：2018-10-04

  Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.

  提供了一种抗碱性过氧化氢水溶液、填孔和平坦化特性以及干法蚀刻特性优异的抗蚀底层膜组合物，该抗蚀底层膜组合物用于多层光刻方法，包括：（A1）聚合物（1A），其包括由以下通式（1）表示的重复单元中的一个或两个或多个；（A2）一种或两种或多种分子量不超过2000且不具有3,4-二羟基苯基的多酚化合物；和（B）有机溶剂。
• RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210397092A1

  公开（公告）日：2021-12-23

  A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH 2 ) p —; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R 01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

  多层光刻法中使用的抗蚀底层膜材料包含以下通式（1）所示的化合物（A）和有机溶剂（B），其中X独立地表示由以下通式（2）所示的一价有机基团；W包含“m”个部分结构，每个部分结构都独立地由以下式（3）所示；“m”和“n”分别表示1到10的整数；断裂的线表示连接臂；Z表示芳香基团；A表示单键或—O—（CH2）p—；“k”表示1到5的整数；“p”表示1到10的整数；R01表示氢原子或具有1到10个碳原子的一价有机基团。该材料能够形成在半导体器件制造过程中通过多层光刻法具有平坦化性能的抗蚀底层膜，以及用于形成抗蚀底层膜的图案化过程和方法。