申请人:Ciba Specialty Chemicals Corporation
公开号:US06703182B1
公开(公告)日:2004-03-09
Compounds of formulae I, II or III
wherein m is zero or 1; n is 1, 2 or 3; R1 inter alia is unsubstituted or substituted phenyl, or naphthyl, anthracyl, phenanthryl, a heteroaryl radical, or C2-C12alkenyl; R′1 inter alia is vinylene, phenylene, naphthylene, diphenylene or oxydiphenylene; R2 inter alia is CN, C1-C4haloalkyl, C2-C6alkoxycarbonyl, phenoxycarbonyl, or benzoyl; R3 inter alia is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl, camphorylsulfonyl, or phenylsulfonyl; R′3 inter alia is C2-C12alkylenedisulfonyl, phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; R4 and R5 inter alia are hydrogen, halogen, C1-C8alkyl, C1-C6alkoxy, C1-C4haloalkyl, CN, NO2, C2-C6alkanoyl, benzoyl, phenyl, —S-phenyl, OR6, SR9, NR7R8, C2-C6alkoxycarbonyl or phenoxycarbonyl; R6 inter alia is hydrogen, phenyl or C1-C12alkyl; R7 and R8 inter alia are hydrogen or C1-C12alkyl; R9 inter alia is C1-C12 alkyl; R10, R11 and R12 inter alia are C1-C6alkyl or phenyl; upon irradiation react as acid generating compounds and thus are suitable in photoresist applications.
化合物的公式为I、II或III,其中m为零或1;n为1、2或3;R1包括未取代或取代的苯基、萘基、蒽基、菲基、杂环基或C2-C12烯基;R′1包括乙烯基、苯基、萘基、二苯基基或氧二苯基基;R2包括CN、C1-C4卤代烷基、C2-C6烷氧羰基、苯氧羰基或苯甲酰基;R3包括C1-C18烷基磺酰基、苯基-C1-C3烷基磺酰基、樟脑基磺酰基或苯磺酰基;R′3包括C2-C12烷二磺酰基、苯基二磺酰基、萘基二磺酰基、二苯基基二磺酰基或氧二苯基基二磺酰基;R4和R5包括氢、卤素、C1-C8烷基、C1-C6烷氧基、C1-C4卤代烷基、CN、NO2、C2-C6酰基、苯甲酰基、苯基、-S-苯基、OR6、SR9、NR7R8、C2-C6烷氧羰基或苯氧羰基;R6包括氢、苯基或C1-C12烷基;R7和R8包括氢或C1-C12烷基;R9包括C1-C12烷基;R10、R11和R12包括C1-C6烷基或苯基;在辐照下反应为产生酸的化合物,因此适用于光刻胶应用。