Effect of Spacer Length of Siloxane-Terminated Side Chains on Charge Transport in Isoindigo-Based Polymer Semiconductor Thin Films
作者:Jianguo Mei、Hung-Chin Wu、Ying Diao、Anthony Appleton、Hong Wang、Yan Zhou、Wen-Ya Lee、Tadanori Kurosawa、Wen-Chang Chen、Zhenan Bao
DOI:10.1002/adfm.201500684
日期:2015.6
A series of isoindigo‐based conjugated polymers (PII2F‐CmSi, m = 3–11) with alkyl siloxane‐terminated side chains are prepared, in which the branching point is systematically “moved away” from the conjugated backbone by one carbon atom. To investigate the structure–property relationship, the polymer thin film is subsequently tested in top‐contact field‐effect transistors, and further characterized
制备了一系列具有烷基硅氧烷封端侧链的基于异靛蓝的共轭聚合物(PII2F-C m Si,m = 3-11),其中分支点系统地从一个共轭主链上“移出”了一个碳原子。为了研究结构与特性的关系,随后在顶部接触场效应晶体管中测试了聚合物薄膜,并通过掠入射X射线衍射和原子力显微镜进一步表征了该薄膜。对于所有可溶性PII2F-C m Si(m = 5-11)聚合物,其空穴迁移率均超过1 cm 2 V -1 s -1,比具有相同聚合物主链的参比聚合物高10倍。PII2F‐C即使PII2F-C 11 Si在3.379Å处表现出最小的π-π堆积距离,9 Si仍显示出4.8 cm 2 V -1 s -1的最高迁移率。具体而言,当分支点位于或超过第三个碳原子时,由π-π堆积距离缩短引起的对电荷传输的贡献变得不那么重要。其他因素,例如薄膜微结构,结晶度,畴尺寸,在影响所得器件的电荷传输中变得越来越重要。