viable within a versatile manganese(I) catalysis manifold. Thus, a wealth of fluorinated alkenes were employed in C–F/C–H functionalizations through facile C–H activation. The robust nature of the manganese(I) catalysis regime was among others reflected by the first C–F/C–H activation with perfluoroalkenes as well as racemization-free C–H functionalizations on imines, aminoacids, and peptides.
Cobalt(III)/Rhodium(III)‐Catalyzed Regio‐ and Stereoselective Allylation of 8‐Methylquinoline via
<i>sp</i>
<sup>3</sup>
C−H Activation
作者:Na Li、Yahui Wang、Lingheng Kong、Junbiao Chang、Xingwei Li
DOI:10.1002/adsc.201900220
日期:2019.8.21
benzylic allylation of 8‐methylquinolines with (per)fluoroalkyl olefins has been realized via benzylic C−H activation and subsequent C−F cleavage. Both cobalt(III) and rhodium(III) catalysts can effect this transformation in good to high efficiency. The Rh(III)‐catalyzed system proceeded under moderate conditions with decent substrates scope, providing (Z)‐alkenyl fluorides with good to excellent regio‐
Heteroleptic μ-nitrido diiron complex supported by phthalocyanine and octapropylporphyrazine ligands: Formation of oxo species and their reactivity with fluorinated compounds
作者:Cédric Colomban、Evgeny V. Kudrik、Alexander B. Sorokin
DOI:10.1142/s1088424617500274
日期:2017.4
with [Formula: see text]-chloroperbenzoic acid to form high-valent diiron oxo species showing strong oxidizing properties. The formation and structure of the transient oxo species was investigated by cryospray collision induced dissociation MS/MS technique. Analysis of fragmentation pattern showed that the attachment of oxo moiety occurred at either iron phthalocyanine or at iron porphyrazine site with
GATE INSULATOR LAYER FOR ORGANIC ELECTRONIC DEVICES
申请人:Mueller David Christoph
公开号:US20120056183A1
公开(公告)日:2012-03-08
Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.
Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.