New multinuclear europium(III) complexes as phosphors applied in fabrication of near UV-based light-emitting diodes
作者:Huihui Wang、Pei He、Shenggui Liu、Jianxin Shi、Menglian Gong
DOI:10.1016/j.inoche.2009.10.031
日期:2010.1
(TGA). The complexes emit the characteristic red luminescence of Eu3+ ion due to the 5D0–7FJ (J = 0–4) transitions under 395 nm-light excitation. Bright red light-emitting diodes were fabricated by coating the selected complex (Eu(AFTFBD)3)3(tmb) onto ∼395 nm-emitting InGaN chips, and the LEDs show appropriate CIE chromaticity coordinates in red area. All these results suggest that the Eu(III) complexes
摘要 设计合成了两种新的多核铕(III)配合物[Eu(AFTFBD)3]2(1,4-bmb)和[Eu(AFTFBD)3]3(tmb),其中HAFTFBD为2-乙酰芴-4 ,4,4-trifluorobutane-1,3-dione, 1,4-bmb 是 1,4-bis[2-(2'-pyridyl)benzimidazolyl] 苯,tmb 是 1,3,5-tris[2-( 2'-吡啶基)苯并咪唑基]苯。通过红外、紫外-可见光、光致发光 (PL) 光谱和热重分析 (TGA) 对配合物进行表征。由于在 395 nm 光激发下的 5D0–7FJ (J = 0–4) 跃迁,复合物发出 Eu3+ 离子的特征性红色发光。通过将选定的复合物 (Eu(AFTFBD)3)3(tmb) 涂覆到约 395 nm 的发射 InGaN 芯片上来制造亮红色发光二极管,并且 LED 在红色区域显示适当的 CIE 色度坐标。