azane;decanedioic acid | 19402-63-2

• 物质功能分类: 有机原料 - 氨基化合物 - 无环单胺、多胺及其衍生物和盐
• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: azane;decanedioic acid
• CAS: 19402-63-2；51877-43-1；63665-82-7
• 化学式: C₁₀H₁₈O₄*2H₃N
• 分子量: 236.312
• InChiKey: IUZSEJJESGRFMH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.44
• 重原子数：
  15
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  75.6
• 氢给体数：
  3
• 氢受体数：
  5

安全信息

• 危险性防范说明：
  P261,P305+P351+P338
• 危险性描述：
  H302,H315,H319,H335

制备方法与用途

用途：用于电容器的生产。

反应信息

• 作为反应物：
  描述：

  azane;decanedioic acid 19.9 ℃ 、7999.96 MPa 条件下， 以24.0%的产率得到10-Amino-10-oxodecanoic acid;azane
  参考文献：
  名称：

  Study of the reactivity of ammonium carboxylates in the synthesis of amides under high-pressure deformation conditions

  摘要：

  DOI：

  10.1007/bf00962116

文献信息

• Polyether amides and process for the preparation thereof
  申请人：Huntsman Corporation

  公开号：EP0451954A2

  公开（公告）日：1991-10-16

  Polyether amides are produced by reacting at least one polyalkylene glycol diamine with at least two dicarboxylic acids or esters thereof. The polyethylene glycol diamine has the formula NH₂-(CH₂CH₂O)x-CH₂CH₂-NH₂, where x ranges from 2 to 6, and at least one of the dicarboxylic acids is an aromatic dicarboxylic acid. The polyether amides may have the formula: where each R and R' are independently an alkyl or aryl moiety having from 3 to 34 carbon atoms, where at least one R or R' is an aryl moiety, and where each x and y independently have the values noted. The resulting polyether amides are useful to make polymers, including fibers, with unusually good water absorbancy properties.

  聚醚酰胺是由至少一种聚乙二醇二胺与至少两种二羧酸或其酯类反应制得。聚乙二醇二胺的化学式为 NH₂-(CH₂CH₂O)x-CH₂CH₂-NH₂，其中 x 为 2 至 6，至少一种二羧酸为芳香族二羧酸。聚醚酰胺可具有以下式子： 其中每个 R 和 R'独立地为具有 3 至 34 个碳原子的烷基或芳基，其中至少一个 R 或 R'为芳基，且每个 x 和 y 独立地具有所述值。由此制得的聚醚酰胺可用于制造吸水性能异常优良的聚合物，包括纤维。
• Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP0827188A2

  公开（公告）日：1998-03-04

  There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

  本发明公开了一种用于生产半导体器件的清洗液，其包括(A)含氟化合物；(B)水溶性或水混溶性有机溶剂；以及(C)无机酸和/或有机酸，可选地，还包括(D)季铵盐或(D')特定有机羧酸铵盐和/或有机羧酸胺盐；以及一种半导体器件的生产工艺，在表面装有绝缘膜层或金属导电层的基片上形成抗蚀图案，通过干法蚀刻形成通孔或电线，通过氧等离子体灰化处理去除抗蚀图案，并用上述清洗液进行清洗处理。上述清洗液和生产工艺可轻松去除干法蚀刻时形成的沉积聚合物，而不会损害金属膜和绝缘膜。
• RADIATION CURABLE COMPOSITION, STORING METHOD THEREOF, FORMING METHOD OF CURED FILM, PATTERNING METHOD, USE OF PATTERN, ELECTRONIC COMPONENTS AND OPTICAL WAVEGUIDE
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP1672426A1

  公开（公告）日：2006-06-21

  The present invention provides a radiation curing composition comprising (a): a siloxane resin, (b): a photoacid generator or photobase generator, and (c): a solvent capable of dissolving component (a) and containing an aprotic solvent.

  本发明提供了一种辐射固化组合物，该组合物包括（a）：硅氧烷树脂；（b）：光酸发生器或光碱发生器；以及（c）：能够溶解（a）组分并含有壬烷溶剂的溶剂。
• FILM, SILICA FILM AND METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING SILICA FILM, AND ELECTRONIC PART
  申请人：Hitachi Chemical Co., Ltd.

  公开号：EP1829945A1

  公开（公告）日：2007-09-05

  The coating film of the invention is obtained by curing an applied film formed by application of a composition containing an organic solvent with a boiling point of 80°C or higher, wherein the shrinkage ratio of the film thickness from the applied film immediately after application is no greater than 27%.

  本发明的涂膜是通过固化由含有沸点为 80°C 或更高的有机溶剂的组合物形成的涂膜而获得的，其中涂膜厚度与涂膜刚涂抹后的收缩率不大于 27%。
• Inorganic film-forming composition for multilayer resist processes, and pattern-forming method
  申请人：JSR CORPORATION

  公开号：US10090163B2

  公开（公告）日：2018-10-02

  An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

  一种用于多层抗蚀剂工艺的无机成膜组合物包括一种配合物，该配合物包括：金属原子；至少一种桥接配体；以及除至少一种桥接配体之外的配体，该配体衍生自羟基酸酯、β-二酮、β-酮酯、β-二羧酸酯或其组合。至少一种桥接配体包括衍生自式（1）所代表化合物的第一桥接配体。第一桥接配体的量不低于桥接配体总量的 50 摩尔%。在式 (1) 中，R1 代表化合价为 n 的有机基团。X代表-OH、-COOH、-NCO或-NHRa，其中Ra代表氢原子或一价有机基团。 R1X)n (1)