Nanoparticle Synthesis via the Photochemical Polythiol Process
摘要:
We introduce the photochemical polythiol process, in which we use ambient light to decompose bismuth, antimony, copper, and lead thiolates to metal nanoparticles. Focusing on bismuth, we produce rhombohedral nanoparticles with narrow size distributions. The approach allows a single-phase synthesis of uniform non-noble metal nanoparticles without a secondary size-selection process. It minimizes use of chemicals and solvents and is more environmentally friendly than competing processes described in the literature.
One-step synthesis of bismuth molybdate catalysts via flame spray pyrolysis for the selective oxidation of propylene to acrolein
作者:K. Schuh、W. Kleist、M. Høj、V. Trouillet、A. D. Jensen、J.-D. Grunwaldt
DOI:10.1039/c4cc07527g
日期:——
Flame spray pyrolysis (FSP) of Bi(iii)- and Mo(vi)-2-ethylhexanoate dissolved in xylene resulted in various nanocrystalline bismuth molybdate phases depending on the Bi/Mo ratio.
Thin films of layered-structure (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 solid solution for ferroelectric random access memory devices
作者:S. B. Desu、P. C. Joshi、X. Zhang、S. O. Ryu
DOI:10.1063/1.119721
日期:1997.8.25
We report on the thinfilms of solid–solution material (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 fabricated by a modified metalorganic solution deposition technique for ferroelectricrandomaccessmemorydevices. Using the modified technique, it was possible to obtain the pyrochlore free crystalline thinfilms at an annealing temperature as low as 600 °C. The solid–solution of layered perovskite materials
Electromechanical properties of SrBi2Ta2O9 thin films
作者:A. L. Kholkin、K. G. Brooks、N. Setter
DOI:10.1063/1.119782
日期:1997.10.6
Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi2Ta2O9 (SBT) thinfilms by means of optical interferometry. Though the maximum polarization and dielectric constant were small enough (7 μC/cm2 and 150, respectively), the piezoelectric coefficient attained 17 pm/V under the dc electric field. This value is comparable with the piezoelectric coefficients reported