八氢-4,7-亚甲基茚酮 | 94277-20-0

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 中文名称: 八氢-4,7-亚甲基茚酮
• 英文名称: 8-Keto tricyclo[5.2.1.0^2,6]decane
• 英文别名: endo-5,6-Trimethylennorbornan-8-on；Octahydro-4,7-methanoindenone；tricyclo[5.2.1.02,6]decan-3-one
• CAS: 94277-20-0
• 化学式: C₁₀H₁₄O
• 分子量: 150.221
• InChiKey: ZTSNSBFZDXDTFS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2
• 重原子数：
  11
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.9
• 拓扑面积：
  17.1
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  八氢-4,7-亚甲基茚酮 在 甲基锂 作用下， 以 甲醇 、 乙醚 为溶剂， 反应 3.0h， 生成 5,6-二氢二环戊二烯
  参考文献：
  名称：

  Determination of Dicyclopentadiene and Its Derivatives as Compounds Causing Odors in Groundwater Supplies

  摘要：

  A study of organic pollutants causing odor events in the groundwater from the Lower Llobregat aquifer system has been conducted. This aquifer acts as water reserve of Barcelona (northeast Spain) when the quality of the raw water from the Llobregat River is low. Closed-loop stripping analysis (CLSA), purge-and-trap (P&T), sensory GC, and flavor profile analysis (FPA) have been used as analytical methodologies to identify the compounds responsible for the odor events. Industrial organochlorinated solvents-di-to hexa chlorinated saturated and unsaturated hydrocarbons-dicyclopentadiene (DCPD) and its derivatives 8-dihydroDCPD, tetrahydroDCPD, and adamantane (the trimer of DCPD) are among the most significant compounds identified in the groundwater. DCPD with a mean concentration of <1 mu g/L in almost all analyzed wells is the compound causing the odor incidents, regardless that some organochlorinated solvents such as 1,1,2-trichloroethane, trichloroethylene, and perchloroethylene might be even 2 or 3 orders of magnitude more concentrated than DCPD. The synthesis of dihydroDCPD was performed for confirmatory purposes. Trained and untrained panelists have established the threshold odor for this compound in the range of 10-25 ng/L. Although further research is needed, it is possible that an illegal landfill closed in the 1970s could be the origin of the different pollutants found.

  DOI：

  10.1021/es960987y
• 作为产物：
  描述：

  内-内-三环[5.2.1.02,6]癸-4-烯-3-醇 在 diiron nonacarbonyl 作用下， 以 苯 为溶剂， 反应 6.0h， 以85%的产率得到八氢-4,7-亚甲基茚酮
  参考文献：
  名称：

  Iranpoor, N.; Imanieh, H.; Forbes, E. J., Synthetic Communications, 1989, vol. 19, # 17, p. 2955 - 2962

  摘要：

  DOI：

文献信息

• Zinc Bismuthate Zn(BiO₃)₂. I. A Useful Oxidizing Agent for the Efficient Oxidation of Organic Compounds
  作者：Habib Firouzabadi、Iraj Mohammadpour-Baltork

  DOI：10.1246/bcsj.65.1131

  日期：1992.4

  Zinc bismuthate is an easily prepared and a stable compound. It could be used as an oxidant in organic solvents under aprotic or in the presence of a catalytic amount of a protic solvent. Primary a...

  铋酸锌是一种易于制备且稳定的化合物。它可以在质子惰性或催化量的质子溶剂存在下在有机溶剂中用作氧化剂。初级...
• CIRCULAR ECONOMY METHODS OF PREPARING UNSATURATED COMPOUNDS
  申请人：INTERNATIONAL FLAVORS & FRAGRANCES INC.

  公开号：US20170362155A1

  公开（公告）日：2017-12-21

  Methods of preparing unsaturated compounds or analogs through dehydrogenation of corresponding saturated compounds and/or hydrogenation of aromatic compounds are disclosed.

  通过脱氢饱和化合物和/或芳香化合物氢化的方法制备不饱和化合物或类似物已被披露。
• Conversion of ketones into lactones with benzeneseleninic acid and hydrogen peroxide (benzeneperoxyseleninic acid): a new reagent for the Baeyer-Villiger reaction
  作者：Paul A. Grieco、Yuusaku Yokoyama、Sydney Gilman、Yasufumi Ohfune

  DOI：10.1039/c39770000870

  日期：——

  Benzeneperoxyseleninic acid generated in situ from benzeneseleninic acid and hydrogen peroxide constitutes a new reagent for the Baeyer–Villiger reaction.

  由苯硒酸和过氧化氢原位生成的苯过氧硒酸构成了Baeyer-Villiger反应的新试剂。
• Acid-sensitive compound and resin composition for photoresist
  申请人：Daicel Chemical Industries, Ltd.

  公开号：US20030180662A1

  公开（公告）日：2003-09-25

  The photoresist resin composition comprises a polymer containing an acid-responsive compound unit of the following formula (e.g. an adamantane skeleton) and a photoactive acid precursor. R 1 may be an alkyl group having a tertiary carbon atom in the 1-position and the Z ring is a bridged-ring hydrocarbon ring comprising 2 to 4 rings. 1 wherein R 1 and R 2 are the same or different from each other and each represents a hydrogen atom, an alkyl group or a cycloalkyl group; R 3 represents a hydrogen atom or a methyl group; R 4 represents a hydrogen atom, a halogen atom, an alkyl group, an oxygen-containing group, an amino group or an N-substituted amino group; the Z ring represents a monocyclic or polycyclic alicyclic hydrocarbon ring; n represents an integer of not less than 1; with proviso that R 4 does not concurrently represent a hydrogen atom, and may be different over n occurrences; in formula (1), R 1 and R 2 may, jointly and together with the adjacent carbon atom, form an alicyclic hydrocarbon ring. The above photoresist resin composition is high in etching resistance, can be solubilized by irradiation, and is capable of providing a finer line pattern.

  照片阻聚合物组成包括聚合物和光活性酸前体，其中聚合物含有以下式子的酸响应化合物单元（例如，金刚烷骨架）：R1可以是1-位具有三级碳原子的烷基基团，Z环是由2至4个环组成的桥环烃环。其中，R1和R2相同或不同，每个表示氢原子、烷基或环烷基；R3表示氢原子或甲基基团；R4表示氢原子、卤素原子、烷基、含氧基团、氨基或N-取代氨基；Z环表示单环或多环脂环烃环；n表示不小于1的整数；但是R4不能同时表示氢原子，在n次出现时可以不同；在式（1）中，R1和R2可以与相邻碳原子共同形成脂环烃环。上述照片阻聚合物组成具有高蚀刻抗性，可以通过辐射溶解，并能够提供更细的线型图案。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION
  申请人：FUJIFILM CORPORATION

  公开号：US20150010855A1

  公开（公告）日：2015-01-08

  There is provided an actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the formula (αI) capable of generating an acid having a size of 200 Å 3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and the formula (αI) is defined as herein, and a resist film formed using the actinic ray-sensitive or radiation-sensitive composition, a resist-coated mask blanks coated with the resist film, a resist pattern forming method comprising exposing the resist film and developing the exposed film, a photomask obtained by exposing and developing the resist-coated mask blanks, a method for manufacturing an electronic device, comprising the resist pattern forming method and an electronic device manufactured by the manufacturing method of an electronic device.

  提供一种感光或辐射敏感的组合物，其中包含(α)一种化合物，其由公式(αI)表示，能够产生大小为200Å3或更大的体积的酸，以及(β)一种化合物，能够在受到光辐射或辐射时产生酸，公式(αI)的定义如本文所述。还提供了使用该感光或辐射敏感组合物形成的光阻膜，涂有光阻膜的光阻涂层掩模坯料，包括曝光光阻膜和显影曝光后膜的光阻图案形成方法，通过曝光和显影涂有光阻涂层的掩模坯料获得的光掩模，以及一种电子器件的制造方法，包括光阻图案形成方法和制造电子器件的电子器件制造方法，以及通过该电子器件制造方法制造的电子器件。