High performance semiconducting polymers containing bis(bithiophenyl dithienothiophene)-based repeating groups for organic thin film transistors
作者:Kyung Hwan Kim、Dae Sung Chung、Chan Eon Park、Dong Hoon Choi
DOI:10.1002/pola.24415
日期:2011.1.1
dithienothiophene‐containing conjugated polymers, such as poly(2,6‐bis(2‐thiophenyl‐3‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 4 and poly(2,6‐bis (2‐thiophenyl‐4‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 8 have been successfully synthesized via Stille coupling reactions using dodecyl‐substituted thiophene‐based monomers, bistributyltin dithienothiophene, and bistributyltin
新型的含有二噻吩并噻吩的共轭聚合物,例如聚(2,6-双(2-噻吩基-3-十二烷基噻吩-2-基)二噻吩并[3,2-b; 2',3'-d]噻吩,4和聚(2,6-双(2-噻吩基-4-十二烷基噻吩-2-基)二噻吩并[3,2-b; 2',3'-d]噻吩,8已通过使用十二烷基取代的噻吩基单体,双三丁基锡二噻吩并噻吩和双三丁基锡联噻吩通过Stille偶联反应成功合成; 这些聚合物已被充分表征。两种聚合物之间的主要区别是重复基团中十二烷基侧链的取代位置。掠入射X射线衍射(GI-XRD)清楚地证明了多晶向基板的边缘定向。已经在有机薄膜晶体管(OTFT)中评估了这两种聚合物的半导体性能。两种共轭聚合物4和8表现出相当高的空穴载流子迁移率,高达μave = 0.05 cm 2 / Vs(I ON / OFF在热退火处理之后,分别为= 3.42×10 4)和μave= 0.01cm 2 / Vs(I ON / OFF=