p-Ethylphenyl-3,7-dimethyl-6-octenylether | 38238-70-9

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: p-Ethylphenyl-3,7-dimethyl-6-octenylether
• 英文别名: 1-(3,7-Dimethyloct-6-enoxy)-4-ethylbenzene
• CAS: 38238-70-9
• 化学式: C₁₈H₂₈O
• 分子量: 260.42
• InChiKey: MKRLQCCBBGVAHP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.3
• 重原子数：
  19
• 可旋转键数：
  8
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.56
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  p-Ethylphenyl-3,7-dimethyl-6-octenylether 在 magnesium sulfate 、 亚硝酰氯 作用下， 以 二氯甲烷 为溶剂， 反应 6.0h， 生成 1-(7-Chloro-3,7-dimethyl-6-nitroso-octyloxy)-4-ethyl-benzene
  参考文献：
  名称：

  Derdzinski, Krzysztof; Zabza, Andrzej, Bulletin of the Polish Academy of Sciences: Chemistry, 1983, vol. 31, # 8-12, p. 217 - 224

  摘要：

  DOI：
• 作为产物：
  描述：

  4-乙基苯酚 、 (+/-)-citronellyl tosylate 在 氢氧化钾 、 sodium iodide 作用下， 以 N,N-二甲基甲酰胺 为溶剂， 反应 8.0h， 生成 p-Ethylphenyl-3,7-dimethyl-6-octenylether
  参考文献：
  名称：

  Derdzinski, Krzysztof; Zabza, Andrzej, Bulletin of the Polish Academy of Sciences: Chemistry, 1983, vol. 31, # 8-12, p. 217 - 224

  摘要：

  DOI：

文献信息

• METHOD FOR PRODUCING AN ORGANIC SEMICONDUCTOR DEVICE
  申请人：VAIDYANATHAN Subramanian

  公开号：US20130200336A1

  公开（公告）日：2013-08-08

  A method for producing an organic semiconductor device ( 110 ) having at least one organic semiconducting material ( 122 ) and at least two electrodes ( 114 ) adapted to support an electric charge carrier transport through the organic semiconducting material ( 122 ) is disclosed. The organic semiconducting material ( 122 ) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer ( 120 ) which at least partially is interposed between the organic semiconducting material ( 122 ) and at least one of the electrodes ( 114 ) of the organic semiconductor device ( 110 ). The intermediate layer ( 120 ) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer ( 120 ) an ambipolar charge carrier transport between the electrodes ( 114 ) is suppressed in favor of a unipolar charge carrier transport.

  本发明公开了一种制备具有至少一种有机半导体材料（122）和至少两个电极（114）的有机半导体器件（110）的方法，所述电极（114）适用于通过有机半导体材料（122）支持电荷载体的传输。所述有机半导体材料（122）本质上具有双极半导体特性。该方法包括至少一步生成至少一个中间层（120），该中间层至少部分介于有机半导体材料（122）和有机半导体器件（110）的至少一个电极（114）之间。所述中间层（120）包括至少一种硫醇化合物，其一般式为HS-R，其中R是有机残基。硫醇化合物具有指向硫醇化合物的SH基团远离的电偶极矩。电偶极矩至少与4-苯基噻吩硫醇中的电偶极矩相同。通过中间层（120），抑制电极（114）之间的双极电荷载体传输，以支持单极电荷载体传输。
• DITHIENOPHTHALIMIDE SEMICONDUCTOR POLYMERS
  申请人：Noguchi Hiroyoshi

  公开号：US20140142265A1

  公开（公告）日：2014-05-22

  The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C—R, wherein R is H or a C 1 -C 40 alkyl group, R 2 , at each occurrence, is independently selected from H, a C 1-40 alkyl group, a C 2-40 alkenyl group, a C 1-40 haloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the C 1-40 alkyl group, the C 2-40 alkenyl group, and the C 1-40 haloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, —NO 2 , OH, NH 2 , —NH(C 1-20 alkyl), N(C 1-20 alkyl) 2 , —S(O) 2 OH, —CHO, —C(O)—C 1-20 alkyl, —C(O)OH, —C(O)—OC 1-20 alkyl, —C(O)NH 2 , —C(O)NH—C 1-20 alkyl, —C(O)N(C 1-20 alkyl) 2 , —OC 1-20 alkyl, —SiH 3 , —SiH(C 1-20 alkyl) 2 , —SiH 2 (C 1-20 alkyl), and —Si(C 1-20 alkyl) 3 ; and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, —CN, —NO 2 , OH, ═C(CN) 2 , —NH 2 , —NH(C 1-20 alkyl), N(C 1-20 alkyl) 2 , —S(O) 2 OH, —CHO, —C(O)OH, —C(O)—C 1-20 alkyl, —C(O)—OC 1-20 alkyl, —C(O)NH 2 , —C(O)NH—C 1-20 alkyl, —C(O)N(C 1-20 alkyl) 2 , —SiH 3 , —SiH(C 1-20 alkyl) 2 , —SiH 2 (C 1-20 alkyl), —Si(C 1-20 alkyl) 3 , —O—C 1-20 alkyl, —O—C 1-20 alkenyl, —O—C 1-20 haloalkyl, C 1-20 alkyl, C 1-20 alkenyl, C 1-20 haloalkyl, C 7-20 arylalkyl, C 6-20 aryloxy and C 7-20 arylcarbonyl. M 2 is a repeating unit comprising one or more cyclic moieties; and n is an integer between 2 and 5,000.
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  申请人：——

  公开号：US4137273A

  公开（公告）日：1979-01-30
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  公开号：US8470961B2

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  公开号：US8664339B2

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