癸二酸铵 | 19402-63-2

• 物质功能分类: 有机原料 - 氨基化合物 - 无环单胺、多胺及其衍生物和盐
• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 中文名称: 癸二酸铵
• 中文别名: 葵二酸二铵；癸二酸铵(电容器级)
• 英文名称: Ammonium sebacate
• 英文别名: diazanium;decanedioate
• CAS: 19402-63-2
• 化学式: C10H24N2O4
• 分子量: 236.31
• InChiKey: SATJMZAWJRWBRX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.36
• 重原子数：
  16
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  82.3
• 氢给体数：
  2
• 氢受体数：
  4

安全信息

• 危险性防范说明：
  P261,P305+P351+P338
• 危险性描述：
  H302,H315,H319,H335

制备方法与用途

用途：用于电容器的生产。

反应信息

• 作为反应物：
  描述：

  癸二酸铵 以5%的产率得到
  参考文献：
  名称：

  ZHAROV, A. A.;CHISTOTINA, N. P., DOKL. AN CCCP, 306,(1989) N, S. 650-654

  摘要：

  DOI：

文献信息

• [EN] PROCESSES FOR PRODUCING NH4<br/>[FR] PROCÉDÉS DE PRODUCTION DE COMPOSÉS NH4
  申请人：BIOAMBER SAS

  公开号：WO2011136944A1

  公开（公告）日：2011-11-03

  A process for making a NH4+ OOC-R-COOH compound from a clarified NH4+ OOC- R-COO' NH4+ compound-containing fermentation broth includes (a) distilling the broth to form an overhead that includes water and ammonia, and a liquid bottoms that includes a NH4+ OOC~R~COOH compound, at least some of a NH4+ QOC-R-COO" NH4+ compound, and at least about 20 wt% water; (b) cooling the bottoms to a temperature sufficient to cause the bottoms to separate into a NH4+ OOC-R~C00' NH4+ compound-containing liquid portion in contact with a NH4+ OOC-R-COOH compoond-containing solid portion that is substantially free of the NH4+ OOC-R-COO" NH4+compound; (c) separating the solid portion from the liquid portion; and (d) recovering the solid portion.

  从澄清的NH4+ OOC-R-COO' NH4+ 化合物含有的发酵液中制备NH4+ OOC-R-COOH 化合物的过程包括(a)将发酵液蒸馏，形成包括水和氨的顶部和包括NH4+ OOC~R~COOH 化合物、至少一些NH4+ QOC-R-COO" NH4+ 化合物以及至少约20重量% 水的液体底部；(b)将底部冷却到足以使底部分离成与NH4+ OOC-R~C00' NH4+ 化合物相接触的液体部分和与NH4+ OOC-R-COOH 化合物相接触的固体部分，该固体部分基本上不含NH4+ OOC-R-COO" NH4+ 化合物；(c)将固体部分与液体部分分离；和(d)回收固体部分。
• [EN] PROCESSES FOR PRODUCING HOOC-R-COOH COMPOUND ACIDS FROM FERMENTATION BROTHS CONTAINING NH4+ -OOC-R-COQ-NH4+ COMPOUNDS<br/>[FR] PROCÉDÉS DE FABRICATION D'ACIDES COMPOSÉS HOOC-R-COOH À PARTIR DE BOUILLONS DE FERMENTATION CONTENANT DES COMPOSÉS NH4
  申请人：BIOAMBER SAS

  公开号：WO2011136945A1

  公开（公告）日：2011-11-03

  A process for making HOOC-R-COOH compound acid from a clarified NH4+ -OOC- R-COO-NH4+ compound-containing fermentation broth including distilling the broth under super atmospheric pressure at a temperature of >I00°C to about 250°C to form an overhead that comprises water and ammonia, and a liquid bottoms that Includes HOOC-R-COOH compound acid, and at least about 20 wt%. water; cooling the. bottoms to a temperature sufficient to cause the bottoms to separate into a liquid portion in contact with a solid portion that is substantially pure HOOC-R-COOH compound acid; separating the solid portion from the liquid portion; and recovering the solid portion.

  从澄清的NH4+ -OOC- R-COO-NH4+化合物含有的发酵液中制备HOOC-R-COOH化合物酸的过程包括在超大气压下将发酵液蒸馏到温度>100°C至约250°C，形成一个包含水和氨的顶部，以及一个包含HOOC-R-COOH化合物酸和至少约20%重量水的液体底物；冷却底物至足以使底物分离成接触固体部分的液体部分，该固体部分基本上是纯的HOOC-R-COOH化合物酸；分离固体部分和液体部分；并回收固体部分。
• Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP0827188A2

  公开（公告）日：1998-03-04

  There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

  本发明公开了一种用于生产半导体器件的清洗液，其包括(A)含氟化合物；(B)水溶性或水混溶性有机溶剂；以及(C)无机酸和/或有机酸，可选地，还包括(D)季铵盐或(D')特定有机羧酸铵盐和/或有机羧酸胺盐；以及一种半导体器件的生产工艺，在表面装有绝缘膜层或金属导电层的基片上形成抗蚀图案，通过干法蚀刻形成通孔或电线，通过氧等离子体灰化处理去除抗蚀图案，并用上述清洗液进行清洗处理。上述清洗液和生产工艺可轻松去除干法蚀刻时形成的沉积聚合物，而不会损害金属膜和绝缘膜。
• RADIATION CURABLE COMPOSITION, STORING METHOD THEREOF, FORMING METHOD OF CURED FILM, PATTERNING METHOD, USE OF PATTERN, ELECTRONIC COMPONENTS AND OPTICAL WAVEGUIDE
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP1672426A1

  公开（公告）日：2006-06-21

  The present invention provides a radiation curing composition comprising (a): a siloxane resin, (b): a photoacid generator or photobase generator, and (c): a solvent capable of dissolving component (a) and containing an aprotic solvent.

  本发明提供了一种辐射固化组合物，该组合物包括（a）：硅氧烷树脂；（b）：光酸发生器或光碱发生器；以及（c）：能够溶解（a）组分并含有壬烷溶剂的溶剂。
• FILM, SILICA FILM AND METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING SILICA FILM, AND ELECTRONIC PART
  申请人：Hitachi Chemical Co., Ltd.

  公开号：EP1829945A1

  公开（公告）日：2007-09-05

  The coating film of the invention is obtained by curing an applied film formed by application of a composition containing an organic solvent with a boiling point of 80°C or higher, wherein the shrinkage ratio of the film thickness from the applied film immediately after application is no greater than 27%.

  本发明的涂膜是通过固化由含有沸点为 80°C 或更高的有机溶剂的组合物形成的涂膜而获得的，其中涂膜厚度与涂膜刚涂抹后的收缩率不大于 27%。