2-(Trifluoromethyl)bicyclo[2.2.1]heptane-2-carboxylic acid | 1896752-94-5

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: 2-(Trifluoromethyl)bicyclo[2.2.1]heptane-2-carboxylic acid
• CAS: 1896752-94-5
• 化学式: C₉H₁₁F₃O₂
• 分子量: 208.18
• InChiKey: RFPCQKBCFSEPOA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  14
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  2-trifluoromethylbicyclo[2.2.1]hept-5-ene-2-carboxylic acid 在 钯 氢气 作用下， 以 甲苯 为溶剂， 以to obtain 2-trifluoromethylbicyclo[2,2,1]heptane-2-carboxylic acid的产率得到2-(Trifluoromethyl)bicyclo[2.2.1]heptane-2-carboxylic acid
  参考文献：
  名称：

  CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS

  摘要：

  本发明提供了一种化学放大负性光阻组合物，包括以下通式（0-1）所表示的离子盐、一种树脂，通过酸的作用和酸发生剂变得不溶于碱性，其中，Rf表示氟原子或三氟甲基基团；Y表示具有3至30个碳原子的环烃基团，环烃基团中的氢原子可以被其本身的杂原子或可被杂原子取代的一价碳氢基团所取代，杂原子可以插入到环烃基团和一价碳氢基团的环结构中；M+表示一价阳离子。可以提供一种化学放大负性光阻组合物，该组合物可以在形成图案时提高分辨率，并给出具有较少线边粗糙度（LER）的图案。

  公开号：

  US20150198877A1

文献信息

• ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20150198876A1

  公开（公告）日：2015-07-16

  The present invention provides the onium salt comprises the material represented by the following general formula (0-1), wherein R f represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms, the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic hydrocarbon group and the monovalent hydrocarbon group; and M + represents a monovalent cation. There can be provided an onium salt which can improve resolution at the time of forming a pattern and give a pattern with less line edge roughness (LER) when it is used in a chemically amplified positive resist composition.

  本发明提供了含有以下通式（0-1）所表示的材料的离子盐，其中Rf表示氟原子或三氟甲基基团；Y表示具有3至30个碳原子的环烃基团，环烃基团中的氢原子可以被其本身的杂原子或可以被杂原子（们）取代的一价碳氢基团所取代，而杂原子（们）可以插入到环烃基团和一价碳氢基团的环状结构中；M+表示一价阳离子。本发明提供了一种离子盐，当它用于化学增强正性光刻胶组合物时，可以改善形成图案时的分辨率，并给出具有较少线边粗糙度（LER）的图案。
• Chemically amplified negative resist composition and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US09329476B2

  公开（公告）日：2016-05-03

  The present invention provides the chemically amplified negative resist composition comprises an onium salt represented by the following general formula (0-1), a resin which becomes alkali insoluble by an action of an acid and an acid generator, wherein Rf represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms, the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic hydrocarbon group and the monovalent hydrocarbon group; and M+ represents a monovalent cation. There can be provided a chemically amplified negative resist composition which can improve resolution at the time of forming a pattern and give a pattern with less line edge roughness (LER).

  本发明提供了一种化学增感负性光刻胶组合物，包括以下通式（0-1）所表示的离子盐、一种树脂，该树脂在酸作用下变得不溶于碱性，并且还包括一个酸发生剂。其中，Rf代表氟原子或三氟甲基基团；Y代表具有3到30个碳原子的环烃基团，该环烃基团中的氢原子可以被其本身或一个可以被杂原子取代的一价碳氢基团所取代，且该杂原子可以插入到环烃基团和一价碳氢基团的环结构中；M+代表一价阳离子。本发明提供了一种化学增感负性光刻胶组合物，可以在形成图案时提高分辨率，并给出具有较少线边粗糙度（LER）的图案。
• Resist composition and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US10222696B2

  公开（公告）日：2019-03-05

  A resist composition comprising a base polymer and a biguanide salt compound offers a high dissolution contrast, minimal LWR, and dimensional stability on PPD.

  由基质聚合物和双胍盐化合物组成的抗蚀剂组合物在 PPD 上具有较高的溶解对比度、最小的 LWR 和尺寸稳定性。
• PATTERN FORMING PROCESS AND SHRINK AGENT
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160139512A1

  公开（公告）日：2016-05-19

  A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactone under the action of acid in a C 7 -C 16 ester or C 8 -C 16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.
• RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180101094A1

  公开（公告）日：2018-04-12

  A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.