There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure:
wherein R
1
, R
2
, R
3
and R
5
are each a hydrogen atom or a methyl group; R
4
is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R
6
is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
本文披露了一种光刻用于220nm或更低波长的光的光阻材料,其包括至少由以下化学式(2)表示的聚合物和用于曝光后生成酸的光酸发生剂:其中,R1、R2、R3和R5分别为氢原子或甲基基团;R4为酸敏感基团、具有7至13个碳原子的脂环烃基团,其具有酸敏感基团、具有7至13个碳原子的脂环烃基团,其具有羧基基团,或具有3至13个碳原子的碳氢基团,其具有环氧基团;R6为氢原子、具有1至12个碳原子的碳氢基团,或具有7至13个碳原子的脂环烃基团,其具有羧基基团;x、y和z是可选值,满足x+y+z=1,0
SEMICONDUCTOR ELEMENT AND INSULATING-LAYER-FORMING COMPOSITION
申请人:FUJIFILM Corporation
公开号:EP3125277A1
公开(公告)日:2017-02-01
Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB).
In General Formula (IA), R1a represents a hydrogen atom, a halogen atom, or an alkyl group. L1a and L2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other. m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L2a-(X)m2a)'s may be the same or different from each other. In General Formula (IB),' R1b represents a hydrogen atom, a halogen atom, or an alkyl group. L1b represents a single bond or a linking group, and Ar1b represents an aromatic ring. m1b represents an integer of 1 to 5.
本发明提供了一种半导体元件,该元件具有半导体层和与半导体层相邻的绝缘层,其中绝缘层由聚合物化合物的交联产物形成,该聚合物化合物具有如下通式(IA)表示的重复单元(IA)和如下通式(IB)表示的重复单元(IB)。
通式(IA)中,R1a 代表氢原子、卤素原子或烷基。L1a 和 L2a 各自独立地代表单键或连接基团。X 代表可交联基团。m2a 代表 1 至 5 的整数,在 m2a 为 2 或 2 以上的情况下,m2a 中 X 的数目可以相同或不同。m1a 代表 1 至 5 的整数,在 m1a 为 2 或 2 以上的情况下,m1a 中 (-L2a-(X)m2a) 的数目可以相同或不同。通式(IB)中,' R1b 代表氢原子、卤素原子或烷基。L1b 代表单键或连接基团,Ar1b 代表芳香环。
TAKAI, TOSHIHIRO;YAMADA, TOHRU;MUKAIYAMA, TERUAKI, CHEM. LETT.,(1990) N, C. 1657-1660
作者:TAKAI, TOSHIHIRO、YAMADA, TOHRU、MUKAIYAMA, TERUAKI
DOI:——
日期:——
MUKAIYAMA, TERUAKI;TAKAI, TOSHIHIRO;YAMADA, TOHRU;RHODE, OLIVER, CHEM. LETT.,(1990) N, C. 1661-1664
作者:MUKAIYAMA, TERUAKI、TAKAI, TOSHIHIRO、YAMADA, TOHRU、RHODE, OLIVER
DOI:——
日期:——
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