A method for forming a Group IV transition metal containing film comprises
a) exposing a substrate to a vapor of a Group IV transition metal containing film forming composition;
b) exposing the substrate to a co-reactant; and
c) repeating the steps of a) and b) until a desired thickness of the Group IV transition metal containing film is deposited on the substrate using a vapor deposition process,
                            一种制备含有IV族过渡
金属薄膜的方法包括以下步骤:
a) 将基板暴露在IV族过渡
金属含有的薄膜形成组合物的蒸汽中;
b) 将基板暴露在共同反应物中;
c) 重复步骤a)和b),直到使用蒸汽沉积工艺在基板上沉积所需厚度的IV族过渡
金属含有的薄膜。