[EN] SYNTHESIS OF ALKYL CYCLOPENTADIENE COMPOUNDS<br/>[FR] SYNTHÈSE DE COMPOSÉS ALKYL CYCLOPENTADIÈNES
申请人:UNIVATION TECH LLC
公开号:WO2011136902A1
公开(公告)日:2011-11-03
A method of synthesizing an alkyl cyclopentadiene compound is disclosed. The method includes contacting at least one cyclopentadienyl anion source and at least one alkyl group source to form at least one alkyl cyclopentadiene compound. The method further includes extracting the alkyl cyclopentadiene compound with a hydrocarbon solvent. The alkyl cyclopentadiene compound may be converted to a metallocene catalyst compound.
POLYMERIZATION CATALYSTS FOR PRODUCING POLYMERS WITH LOW MELT ELASTICITY
申请人:CHEVRON PHILLIPS CHEMICAL COMPANY LP
公开号:US20130245302A1
公开(公告)日:2013-09-19
The present techniques relate to catalyst compositions, methods, and polymers encompassing a Group 4 metallocene compound comprising bridging η
5
-cyclopentadienyl-type ligands, typically in combination with a cocatalyst, and a activator. The compositions and methods presented herein include ethylene polymers with low melt elasticity.
Polymerization catalysts for producing polymers with low melt elasticity
申请人:Yang Qing
公开号:US20090088543A1
公开(公告)日:2009-04-02
The present techniques relate to catalyst compositions, methods, and polymers encompassing a Group 4 metallocene compound comprising bridging η
5
-cyclopentadienyl-type ligands, typically in combination with a cocatalyst, and a activator. The compositions and methods presented herein include ethylene polymers with low melt elasticity.
GROUP IV ELEMENT CONTAINING PRECURSORS AND DEPOSITION OF GROUP IV ELEMENT CONTAINING FILMS
申请人:L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
公开号:US20220205099A1
公开(公告)日:2022-06-30
A method for forming a Group IV transition metal containing film comprises
a) exposing a substrate to a vapor of a Group IV transition metal containing film forming composition;
b) exposing the substrate to a co-reactant; and
c) repeating the steps of a) and b) until a desired thickness of the Group IV transition metal containing film is deposited on the substrate using a vapor deposition process,
一种制备含有IV族过渡金属薄膜的方法包括以下步骤:
a) 将基板暴露在IV族过渡金属含有的薄膜形成组合物的蒸汽中;
b) 将基板暴露在共同反应物中;
c) 重复步骤a)和b),直到使用蒸汽沉积工艺在基板上沉积所需厚度的IV族过渡金属含有的薄膜。