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2-Ethyl-2-norbornyl acetate

中文名称
——
中文别名
——
英文名称
2-Ethyl-2-norbornyl acetate
英文别名
(2-ethyl-2-bicyclo[2.2.1]heptanyl) acetate
2-Ethyl-2-norbornyl acetate化学式
CAS
——
化学式
C11H18O2
mdl
——
分子量
182.26
InChiKey
ZGCWLBHOITVYSL-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.6
  • 重原子数:
    13
  • 可旋转键数:
    3
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.91
  • 拓扑面积:
    26.3
  • 氢给体数:
    0
  • 氢受体数:
    2

反应信息

  • 作为反应物:
    描述:
    2-Ethyl-2-bicyclo[2.2.1]heptyl 3-hydroxybutanoate 、 2-Ethyl-2-norbornyl acetate乙醛lithium hexamethyldisilazane5-降冰片烯-2-酰氯4-二甲氨基吡啶 ice 、 silica gel 作用下, 以 二氯甲烷吡啶 为溶剂, 反应 4.0h, 以obtaining 96.7 g of 2-(2-ethyl-2-bicyclo[2.2.1]-heptyloxycarbonyl)propyl 2-norbornene-5-carboxylate的产率得到2-(2-ethyl-2-bicyclo[2.2.1]-heptyloxycarbonyl)propyl 2-norbornene-5-carboxylate
    参考文献:
    名称:
    Novel ester compounds, polymers, resist compositions and patterning process
    摘要:
    提供了以下式子(1)的酯化合物。其中,1R1为H、甲基或CH2CO2R3,R2为H、甲基或CO2R3,R3为C1-C15烷基,R4为支链或环状,三级C5-C20烷基,Z为二价的C1-C10碳氢基团,k为0或1。以该酯化合物为基础树脂的抗蚀剂组合物对高能辐射敏感,具有优异的敏感性、分辨率和蚀刻抗性,并适用于使用电子束或深紫外进行微细图案化。
    公开号:
    US20020007031A1
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文献信息

  • SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    申请人:SUMITOMO CHEMICAL COMPANY, LIMITED
    公开号:US20190137873A1
    公开(公告)日:2019-05-09
    The present invention can provide a salt and a resist composition including the salt, capable of producing a resist pattern with satisfactory line edge roughness (LER). A salt represented by formula (I): wherein R 1 and R 2 each represent a chain hydrocarbon group which may have a substituent, an alicyclic hydrocarbon group which may have a substituent or an aromatic hydrocarbon group which may have a substituent, or R 1 and R 2 are bonded each other to form a ring together with sulfur atoms to which they are bonded, R 3 , R 4 and R 5 each independently represent a hydrogen atom, a fluorine atom or a hydrocarbon group having 1 to 12 carbon atoms, —CH 2 — included in the hydrocarbon group may be replaced by —O— or —CO—, and A − represents a counter anion.
    本发明提供了一种盐和包括该盐的抗蚀剂组合物,能够产生具有令人满意的线边粗糙度(LER)的抗蚀图案。该盐由式(I)表示:其中R1和R2各代表可能具有取代基的链烃基,可能具有取代基的脂环烃基或可能具有取代基的芳香烃基,或者R1和R2彼此相连以形成与它们结合的原子一起的环,R3、R4和R5各自独立地表示氢原子、原子或具有1至12个碳原子的烃基,烃基中包括的—CH2—可以被—O—或—CO—所取代,A-表示反离子。
  • SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME
    申请人:SUMITOMO CHEMICAL COMPANY, LIMITED
    公开号:US20190112265A1
    公开(公告)日:2019-04-18
    A salt comprising a group represented by the formula (aa): wherein X a and X b independently each represent an oxygen atom or a sulfur atom, and X 1 represents a C1-C12 saturated hydrocarbon group which has a moiety represented by formula (1 a ) or (2 a ):
    一种盐,其由公式(aa)表示的基团组成:其中Xa和Xb分别独立地表示氧原子或原子,而X1表示具有由公式(1a)或(2a)表示的基团的C1-C12饱和碳氢基团。
  • ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US20210149301A1
    公开(公告)日:2021-05-20
    An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.
    提供具有公式(1)的醇盐,作为酸扩散抑制剂化学增强型抗蚀剂组合物。当通过光刻加工时,该抗蚀剂组合物表现出溶解对比度,抑制酸扩散效果以及出色的光刻性能因素,例如CDU,LWR和灵敏度。
  • COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE
    申请人:FUJIFILM CORPORATION
    公开号:US20160024005A1
    公开(公告)日:2016-01-28
    There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following formula (1) or (2), and the formula (1) and (2) are defined as herein, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising a step of exposing the resist film, and a step of developing the exposed film, and a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.
    提供了一种包含下列式子(1)或(2)所代表的化合物的光致射线敏感或辐射敏感的树脂组合物,其中式(1)和(2)的定义如本文所述,以及包括该光致射线敏感或辐射敏感的树脂组合物的光阻膜,以及包括曝光光阻膜的步骤和显影曝光膜的步骤的图案形成方法,以及包括图案形成方法的制造电子装置的方法,以及由电子装置的制造方法制造的电子装置。
  • Novel ester compounds having alicyclic structure and method for preparing same
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:US20010051742A1
    公开(公告)日:2001-12-13
    Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. 1 R 1 is H or C 1-6 alkyl, R 2 is an unsubstituted or halo-substituted acyl or alkoxycarbonyl group of 1-15 carbon atoms, R 3 is an acid labile group, k is 0 or 1, and m is an integer from 0 to 5.
    式(1)的酯化合物是有用的单体,可形成基础树脂,用于化学增强的抗蚀剂组合物,适用于微图案化学制图。其中,1R1为氢或C1-6烷基,R2为未取代或卤代的1-15个碳原子的酰基或烷氧羰基基团,R3为酸敏感基团,k为0或1,m为0至5的整数。
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