3-oxa-bicyclo[3.3.1]nonan-2-one | 88314-71-0

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 内酯类
• 英文名称: 3-oxa-bicyclo[3.3.1]nonan-2-one
• 英文别名: 3-Oxa-bicyclo[3.3.1]nonan-2-on；Oxabicyclo[3.3.1]nonanone；3-oxabicyclo[3.3.1]nonan-2-one
• CAS: 88314-71-0
• 化学式: C₈H₁₂O₂
• 分子量: 140.182
• InChiKey: CLICQHLXHWRQDC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.5
• 重原子数：
  10
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  3-oxa-bicyclo[3.3.1]nonan-2-one 、 三甲基氯硅烷 在 lithium chloride 、 lithium diisopropyl amide 作用下， 以 四氢呋喃 为溶剂， 反应 3.0h， 以61%的产率得到1-Trimethylsilanyl-3-oxa-bicyclo[3.3.1]nonan-2-one
  参考文献：
  名称：

  桥头烯烯酸酯：氨基酰胺锂取代和取代桥联的小羰基化合物。

  摘要：

  [反应：见正文]与预期相反，许多桥接的羰基化合物与酰胺基锂进行了容易的桥头金属化。已证明二酮，内酯，内酰胺和酰亚胺官能团都参与了这种类型的“桥头烯醇盐”化学反应，从而产生了一系列取代产物。还可以通过不对称桥头金属化在非常高的ee中对内消旋化合物进行对称化。

  DOI：

  10.1021/ol034348l
• 作为产物：
  描述：

  alkaline earth salt of/the/ methylsulfuric acid 在 镍 作用下， 生成 3-oxa-bicyclo[3.3.1]nonan-2-one
  参考文献：
  名称：

  Komppa et al., Justus Liebigs Annalen der Chemie, 1936, vol. 521, p. 242,260

  摘要：

  DOI：

文献信息

• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND
  申请人：FUJIFILM CORPORATION

  公开号：US20160070167A1

  公开（公告）日：2016-03-10

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.

  提供了一种图案形成方法，包括（i）形成一种薄膜，其中包含一种感光树脂组成物，该组成物包含（A）一种特定化学式代表的化合物，（B）一种不同于化合物（A）的化合物，在接受光辐射后能够产生酸，并且（P）一种树脂，该树脂不会与从化合物（A）产生的酸发生反应，并且能够通过来自化合物（B）产生的酸的作用降低有机溶剂含有的显影剂的溶解度，（ii）曝光薄膜，（iii）使用有机溶剂含有的显影剂对曝光后的薄膜进行显影，形成负图案；上述感光树脂组成物；使用该组成物的抗蚀膜。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20210356862A1

  公开（公告）日：2021-11-18

  An actinic ray-sensitive or radiation-sensitive resin composition includes a compound represented by General Formula (I) and an acid-decomposable resin. M 1 + A − -L-B − M 2 + (I)

  一种感光射线或辐射敏感的树脂组合物，包括通式（I）所表示的化合物和可酸分解树脂。M1+A−-L-B−M2+（I）
• Pattern forming method, method for manufacturing electronic device, monomer for producing resin for semiconductor device manufacturing process, resin, method for producing resin, actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film
  申请人：FUJIFILM Corporation

  公开号：US11150557B2

  公开（公告）日：2021-10-19

  Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

  本发明提供了一种图案形成方法，包括使用树脂组合物形成薄膜的成膜步骤，该树脂组合物含有从具有硅原子的单体中获得的树脂 (A)，根据 JIS K0101：1998，使用甲臢作为参考材料和积分球测量系统作为测量系统，其中图案形成方法能够显著改善浮渣缺陷性能，尤其是在形成超细图案（例如，线宽为 50 nm 或以下的线-空图案，或孔径为 50 nm 或以下的孔图案）时）；以及使用该图案形成方法制造电子设备的方法。
• EPOXY RESINS AND PROCESSES FOR PREPARING THE SAME
  申请人：Hefner, JR. Robert E.

  公开号：US20110039982A1

  公开（公告）日：2011-02-17

  Epoxy resins comprising a cis, trans-1,3- and -1,4-cyclohexanedimethylether moiety and processes for preparing the epoxy resins. The process of preparation of the epoxy resins comprises reacting (a) a mixture of a cis-1,3-cyclohexanedimethanol, a trans-1,3-cyclohexanedimethanol, a cis-1,4-cyclohexanedimethanol, and a trans-1,4-cyclohexanedimethanol, (b) an epihalohydrin, (c) a basic acting substance, (d) optionally, a solvent, (e) optionally, a catalyst, and/or (f) optionally, a dehydrating agent. The process may be a slurry epoxidation process, an anhydrous epoxidation process, or a Lewis acid catalyzed coupling and epoxidation process.
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20150111154A1

  公开（公告）日：2015-04-23

  There is provided a pattern forming method including: (a) a process of forming a film by resin (P) having a repeating unit (a) having a cyclic structure and a partial structure represented by the following Formula (I), (II-1) or (II-2), and a repeating unit (b) having a group which decomposes by the action of an acid to generates a polar group, and an actinic ray-sensitive or radiation-sensitive resin composition containing compound (B) which generates acid upon irradiation with an actinic ray or radiation; (b) a process of exposing the film; and (c) a process of forming a negative-type pattern by performing development using a developer including an organic solvent, an actinic ray-sensitive or radiation-sensitive resin composition used therefor, a resist film, a method of manufacturing an electronic device, and an electronic device.