FLUORINATED SULFONATE ESTERS OF ARYL KETONES FOR NON-IONIC PHOTO-ACID GENERATORS
申请人:International Business Machines Corporation
公开号:US20180046077A1
公开(公告)日:2018-02-15
Non-ionic photo-acid generating (PAG) compounds were prepared that contain an aryl ketone group having a perfluorinated substituent alpha to the ketone carbonyl. The non-polymeric PAGs release a sulfonic acid when exposed to high energy radiation such as deep UV or extreme UV light. The photo-generated sulfonic acid has a low diffusion rate in an exposed resist layer subjected to a post-exposure bake (PEB) at 100° C. to 150° C., resulting in formation of good line patterns after development. At higher temperatures, the PAGs can also undergo a thermal reaction to form a sulfonic acid. The perfluorinated substituent provides improved thermal stability and hydrolytic/nucleophilic stability.
RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
申请人:Mitsubishi Gas Chemical Company, Inc.
公开号:US20160145231A1
公开(公告)日:2016-05-26
A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.
OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF
申请人:Mitsubishi Gas Chemical Company, Inc.
公开号:US20200262787A1
公开(公告)日:2020-08-20
The present invention provides an optical component forming composition comprising a tellurium-containing compound or a tellurium-containing resin.
本发明提供了一种包括含碲化合物或含碲树脂的光学元件成型组合物。
NON-IONIC ARYL KETONE BASED POLYMERIC PHOTO-ACID GENERATORS
申请人:International Business Machines Corporation
公开号:US20180044459A1
公开(公告)日:2018-02-15
Non-ionic photo-acid generating (PAG) polymerizable monomers were prepared that contain a side chain sulfonate ester of an alpha-hydroxy aryl ketone. The aryl ketone group has a perfluorinated substituent alpha to the ketone carbonyl. The sulfur of the sulfonate ester is also directly linked to a fluorinated group. PAG polymers prepared from the PAG monomers release a strong sulfonic acid when exposed to high energy radiation such as deep UV or extreme UV light. The photo-generated sulfonic acid has a low diffusion rate in an exposed resist layer subjected to a post-exposure bake (PEB) at 100° C. to 150° C., resulting in formation of good line patterns after development.
Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same
申请人:Central Glass Company, Limited
公开号:US20150198879A1
公开(公告)日:2015-07-16
Disclosed is a fluorine-containing sulfonic acid salt resin having a repeating unit represented by the following general formula (3). In the formula, each A independently represents a hydrogen atom, a fluorine atom or a trifluoromethyl group, and n represents an integer of 1-10. W represents a bivalent linking group, R
01
represents a hydrogen atom or a monovalent organic group, and M
+
represents a monovalent cation. A resist composition containing this resin is further superior in sensitivity, resolution and reproducibility of mask pattern and is capable of forming a pattern with a low LER.