A novel air-stable n-type organic semiconductor: 4,4′-bis[(6,6′-diphenyl)-2,2-difluoro-1,3,2-dioxaborine] and its application in organic ambipolar field-effect transistors
作者:Yanming Sun、Dirk Rohde、Yunqi Liu、Lijun Wan、Ying Wang、Weiping Wu、Chongan Di、Gui Yu、Daoben Zhu
DOI:10.1039/b608840f
日期:——
Novel air-stable n-type organic field-effect transistors based on 4,4â²-bis[(6,6â²-diphenyl)-2,2-difluoro-1,3,2-dioxaborine] (DOB) have been fabricated. The devices exhibit a filed-effect mobility of 1 Ã 10â4 cm2 Vâ1 sâ1, an on/off ratio of 104 and a threshold voltage of 8.6 V at room temperature under ambient conditions. Moreover, ambipolar organic field-effect transistors based on DOB and copper phthalocyanine (CuPc) have been fabricated. Two device structures were adopted to investigate their transport properties. When devices were constructed with DOB as the first layer and CuPc as the second layer, they showed typical ambipolar transport properties. However, when the two layers were exchanged, the devices only showed p-channel transport properties. It is probable that CuPc, a bad electron transport material, blocks the electron transport to the DOB layer, leading to the disappearance of electron enhancement.
基于 4,4â²-双[(6,6â²-二苯基)-2,2-二氟-1,3,2-二氧硼烷](DOB)的新型空气稳定 n 型有机场效应晶体管已经制成。在室温环境下,该器件的锉效应迁移率为 1 Ã 10â4 cm2 Vâ1 sâ1,导通/关断比为 104,阈值电压为 8.6 V。此外,还制作出了基于 DOB 和铜酞菁(CuPc)的双极有机场效应晶体管。我们采用了两种器件结构来研究它们的传输特性。当以 DOB 为第一层、CuPc 为第二层时,器件显示出典型的伏极传输特性。然而,当交换这两层时,器件只显示出 p 沟道传输特性。这可能是因为 CuPc 是一种不良的电子传输材料,它阻碍了电子向 DOB 层的传输,导致电子增强功能消失。