RUTHENIUM COMPLEX MIXTURE, METHOD OF PRODUCING THE SAME, COMPOSITION FOR FILM FORMATION, RUTHENIUM-CONTAINING FILM, AND METHOD OF PRODUCING THE SAME
申请人:Maniwa Atsushi
公开号:US20120227625A1
公开(公告)日:2012-09-13
For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.
为了通过CVD方法形成良好质量的薄钌膜,需要在低温下形成薄膜。因此,人们希望有一种对热具有高活性的钌化合物。本发明涉及一种使用包含(2,4-二甲基戊二烯基)(乙基环戊二烯基)钌和双(2,4-二甲基戊二烯基)钌的钌配合物混合物作为原料,通过CVD或类似方法生产含钌膜的方法,后一种化合物的量基于(2,4-二甲基戊二烯基)(乙基环戊二烯基)钌的重量为0.1至100%。