Lead zirconate titanate (PZT) films between 1 and 3 μm thick were grown using solution deposition techniques to study the effects of crystal structure and orientation on the direct piezoelectric output of these films on platinized Si membranes. By varying the chemistry of the film from Zr-rich to Ti-rich, the 100}/(111) relative intensity increased for films grown on randomly oriented Pt films. The 40:60 PZT had a tetragonal crystal structure and produced greater electrical output at a given strain than the rhombohedral film (Zr:Ti concentrations less than 50:50), while having a similar e31 constant, between 4.8 and 6.3 C/m2. Orientation and voltage output at a given strain were not strongly influenced by thickness in the ranges investigated. Defects in internal PZT/PZT crystallization interfaces were identified and include porosity on the order of tens of nm, with a corresponding depletion in Pb and accumulation of O at these interfaces. The 100} texture of rhombohedral films deposited upon (111) textured Pt films is significantly greater than the 100} texture of tetragonal films, which show both a 100} and 111} orientation on the same Pt film.
利用溶液沉积技术生长了厚度为 1 至 3 μm 的锆钛酸铅(PZT)薄膜,以研究晶体结构和取向对这些薄膜在铂化硅膜上的直接压电输出的影响。通过改变薄膜的化学性质(从富含 Zr 到富含 Ti),在随机取向的铂薄膜上生长的薄膜的 100}/(111) 相对强度增加了。40:60 PZT 具有四方晶体结构,在给定应变下比斜方体薄膜(Zr:Ti 浓度低于 50:50)产生更大的电输出,同时具有相似的 e31 常量,介于 4.8 和 6.3 C/m2 之间。在所研究的范围内,厚度对给定应变下的方向和电压输出影响不大。在 PZT/PZT 内部结晶界面上发现了缺陷,包括数十纳米量级的孔隙率,以及在这些界面上相应的铅耗竭和 O 积累。沉积在(111)纹理铂薄膜上的斜方体薄膜的100}纹理明显大于四方薄膜的100}纹理,后者在同一铂薄膜上同时显示出100}和111}取向。