bis(2,2-dimethyl-1,3-dioxolan-4-yl)methyl methacrylate | 1390654-90-6

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: bis(2,2-dimethyl-1,3-dioxolan-4-yl)methyl methacrylate
• 英文别名: Bis(2,2-dimethyl-1,3-dioxolan-4-yl)methyl 2-methylprop-2-enoate
• CAS: 1390654-90-6；85266-58-6
• 化学式: C₁₅H₂₄O₆
• 分子量: 300.352
• InChiKey: DPKAMABLFBOADL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  21
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  63.2
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为产物：
  描述：

  Adonitol 在 molecular sieve 4-二甲氨基吡啶 、 碳酸氢钠 、 magnesium sulfate 、 potassium carbonate 、 三乙胺 作用下， 以 甲醇 、 乙醚 、 二氯甲烷 、 水 、 丙酮 为溶剂， 生成 bis(2,2-dimethyl-1,3-dioxolan-4-yl)methyl methacrylate
  参考文献：
  名称：

  Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns

  摘要：

  提供了含有缩醛基团的(甲基)丙烯酸酯单体，含有由这种单体形成的单元的聚合物和含有这种聚合物的光阻组成物。这些单体、聚合物和光阻组成物在形成光刻图案方面非常有用。此外，还提供了用光阻组成物涂覆的基板、形成光刻图案的方法和电子设备。这些组成物、方法和涂覆的基板在制造半导体器件方面具有特殊的适用性。

  公开号：

  EP2472324A1

文献信息

• MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS
  申请人：Ober Matthias S.

  公开号：US20130011783A1

  公开（公告）日：2013-01-10

  Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

  提供含有缩醛基团的（甲基）丙烯酸酯单体，包含由这种单体形成的单元的聚合物，以及含有这种聚合物的光刻胶组合物。这些单体、聚合物和光刻胶组合物可用于形成光刻图案。还提供了涂有光刻胶组合物的基板、形成光刻图案的方法和电子设备。这些组合物、方法和涂层基板在半导体器件制造中具有特定的适用性。
• PHOTOACID-GENERATING COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE
  申请人：ROHM AND HAAS ELECTRONIC MATERIALS LLC

  公开号：US20150177613A1

  公开（公告）日：2015-06-25

  A copolymer include repeat units derived from an acid-labile monomer, an aliphatic lactone-containing monomer, a C 1-12 alkyl (meth)acrylate in which the C 1-12 alkyl group includes a specific base-soluble group, a photoacid-generating monomer that includes an aliphatic anion, and a neutral aromatic monomer having the formula wherein R 1 , R 2 , R 3 , X, m, and Ar are defined herein. The copolymer is used as a component of a photoresist composition. A coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using the coated substrate are described.
• BLOCK COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION AND METHOD OF FORMING AN ELECTRONIC DEVICE
  申请人：The University of Queensland

  公开号：US20170037178A1

  公开（公告）日：2017-02-09

  A block copolymer useful in electron beam and extreme ultraviolet photolithography includes a first block with units derived from a base-solubility-enhancing monomer and an out-of-band absorbing monomer, and a second block having a low surface energy. Repeat units derived from the out-of-ban absorbing monomer allow the copolymer to absorb significantly in the wavelength range 150 to 400 nanometers. When incorporated into a photoresist composition with a photoresist random polymer, the block copolymer self-segregates to form a top layer that effectively screens out-of-band radiation.
• US8771917B2
  申请人：——

  公开号：US8771917B2

  公开（公告）日：2014-07-08
• US9229319B2
  申请人：——

  公开号：US9229319B2

  公开（公告）日：2016-01-05