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2-propoxyhexane

中文名称
——
中文别名
——
英文名称
2-propoxyhexane
英文别名
——
2-propoxyhexane化学式
CAS
——
化学式
C9H20O
mdl
——
分子量
144.257
InChiKey
QTIVEYAJMDHETH-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.2
  • 重原子数:
    10
  • 可旋转键数:
    6
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    1

反应信息

  • 作为产物:
    描述:
    2,5-二甲基呋喃丙醇 在 10 wt% platinum on carbon 、 氢气 作用下, 120.0 ℃ 、3.3 MPa 条件下, 生成 2-己醇2-己酮2-propoxyhexane
    参考文献:
    名称:
    Mechanisms for High Selectivity in the Hydrodeoxygenation of 5-Hydroxymethylfurfural over PtCo Nanocrystals
    摘要:
    Carbon-supported, Pt and PtCo nanocrystals (NCs) with controlled size and composition were synthesized and examined for hydrodeoxygenation (HDO) of 5-hydroxymethylfurfural (HMF). Experiments in a continuous flow reactor with 1-propanol solvent, at 120 to 160 degrees C and 33 bar H-2, demonstrated that reaction is sequential on both Pt and PtCo alloys, with 2,5-dimethylfuran (DMF) formed as an intermediate product. However, the reaction of DMF is greatly suppressed on the alloys, such that a Pt3Co2 catalyst achieved DMF yields as high as 98%. XRD and XAS data indicate that the Pt3Co2 catalyst consists of a Pt-rich core and a Co oxide surface monolayer whose structure differs substantially from that of bulk Co oxide. Density functional theory (DFT) calculations reveal that the oxide monolayer interacts weakly with the furan ring to prevent side reactions, including overhydrogenation and ring opening, while providing sites for effective HDO to the desired product, DMF. We demonstrate that control over metal nanoparticle size and composition, along with operating conditions, is crucial to achieving good performance and stability. Implications of this mechanism for other reactions and catalysts are discussed.
    DOI:
    10.1021/acscatal.6b00750
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文献信息

  • Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition
    申请人:Shin-Etsu Chemical Co., Ltd.
    公开号:EP2826826A1
    公开(公告)日:2015-01-21
    The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.
    本发明提供了一种用于形成涂层型 BPSG 薄膜的组合物,该组合物包括:由以下通式 (1) 所代表的硅酸作为骨架结构的一种或多种结构、由以下通式 (2) 所代表的磷酸作为骨架结构的一种或多种结构以及由以下通式 (3) 所代表的硼酸作为骨架结构的一种或多种结构。本发明可提供一种用于形成涂层型 BPSG 薄膜的组合物,该组合物在精细图案方面具有优异的粘附性,可通过剥离溶液轻松进行湿蚀刻,不会对半导体设备基板、涂层型有机薄膜或图案化过程中所需的主要由碳构成的 CVD 薄膜造成任何损害,并且通过在涂层过程中形成该组合物,可抑制颗粒的生成。
  • US4323712A
    申请人:——
    公开号:US4323712A
    公开(公告)日:1982-04-06
  • US9563121B2
    申请人:——
    公开号:US9563121B2
    公开(公告)日:2017-02-07
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