Heteroleptic iridium precursors to be used for the deposition of iridium-containing films
申请人:American Air Liquide, Inc.
公开号:US08658249B2
公开(公告)日:2014-02-25
The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula:
XIrYA,
wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.
本发明提供了一种在基底上沉积含铱膜的方法,该方法包括以下步骤:在反应器中提供至少一个基底;将至少一个含铱前体引入反应器,该含铱前体具有以下公式:XIrYA,其中A等于1或2,i)当A为1时,X是二烯基配体,Y是二烯配体;ii)当A为2时,a)X是二烯基配体,Y选自CO和乙烯配体,b)X是选自H、烷基、烷基酰胺、烷氧基、烷基硅基、烷基硅酰胺、烷基氨基和氟烷基的配体,每个Y都是二烯配体,c)X是二烯基配体,Y是二烯配体;在反应器中以等于或高于100°C的温度反应至少一个含铱前体;并将由至少一个含铱前体反应形成的含铱膜沉积在至少一个基底上。