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2-戊酮,3-羟基-3-甲基-,(3S)- | 745822-59-7

中文名称
2-戊酮,3-羟基-3-甲基-,(3S)-
中文别名
8-[(乙烯基氧基)甲基]三环[5.2.1.02,6]癸烷
英文名称
5-[(Ethenyloxy)methyl]octahydro-1H-4,7-methanoindene
英文别名
8-(ethenoxymethyl)tricyclo[5.2.1.02,6]decane
2-戊酮,3-羟基-3-甲基-,(3S)-化学式
CAS
745822-59-7
化学式
C13H20O
mdl
——
分子量
192.3
InChiKey
AMSZDYRRDGMXIE-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4
  • 重原子数:
    14
  • 可旋转键数:
    3
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.85
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    1

文献信息

  • RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
    申请人:Momose Hikaru
    公开号:US20090198065A1
    公开(公告)日:2009-08-06
    To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K 1 and K 2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L 1 and L 2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M 1 , M 2 and M 3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y 1 and Y 2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R 1 represents H or a methyl group.
    提供一种抗蚀聚合物,其由一个具有结构式(1)或(2)所表示的酸分解单元作为结构单元,能够在DUV准分子激光微影或类似工艺中表现出小的线边粗糙度并产生少量缺陷。在式(1)和(2)中,n表示2至24的整数;J表示单键或二价碳氢基团,当n=2时可以具有取代基/杂原子,或者当n≥3时可以表示n价碳氢基团,可以具有取代基/杂原子;E表示聚合终止剂、链转移剂或聚合引发剂的残基;K1和K2分别表示至少选择自烷基、环烷基、氧烷基、芳烃、二价噻唑环、二价噁唑环和二价咪唑环中的至少一种;L1和L2分别表示至少选择自—C(O)O—、—C(O)—和—OC(O)—中的至少一种;M1、M2和M3分别表示至少选择自烷基、环烷基、氧烷基和芳烃中的至少一种;Y、Y1和Y2分别表示酸分解键;k1、k2、l1、L2、m1、m2和m3分别表示0或1;R1表示H或甲基基团。
  • SURFACE TREATMENT COMPOSITION
    申请人:Daikin Industries, Ltd.
    公开号:EP2921510A1
    公开(公告)日:2015-09-23
    The present invention provides a composition which is able to form a layer having excellent surface slip property and friction durability in addition to water-repellency, oil-repellency and antifouling property. The present invention provides a surface-treatment composition comprising (A) at least one fluorine-containing polymer having a curable moiety, and (B) at least one silicon-containing polymer having a curable moiety.
    本发明提供了一种组合物,该组合物除具有憎性、憎油性和防污性外,还能形成一层具有优异表面滑爽性和摩擦耐久性的涂层。本发明提供了一种表面处理组合物,该组合物包含 (A) 至少一种具有可固化分子的含聚合物和 (B) 至少一种具有可固化分子的含聚合物。
  • Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    申请人:Momose Hikaru
    公开号:US20070190449A1
    公开(公告)日:2007-08-16
    To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K 1 and K 2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L 1 and L 2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M 1 , M 2 and M 3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y 1 and Y 2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R 1 represents H or a methyl group.
  • RESIN COMPOSITION FOR PHOTOIMPRINTING, PATTERN FORMING PROCESS AND ETCHING MASK
    申请人:Hayashida Yoshihisa
    公开号:US20130288021A1
    公开(公告)日:2013-10-31
    A resin composition for photoimprinting, a cured product of the resin composition which is excellent in etching and heat resistance, and a pattern forming process using the resin composition are provided. The resin composition contains photocurable monomer (A) containing at least one carbazole compound of formula (I): a photocurable monomer (B) containing at least one compound of the following formulae (II), (III), and (IV): and a photopolymerization initiator (C). The weight ratio of the photocurable monomer (A) to the photocurable monomer (B) is from 30/70 to 87/13.
  • FLUORINE-CONTAINING, SILICON-CONTAINING POLYMER AND SURFACE TREATMENT AGENT
    申请人:DAIKIN INDUSTRIES., LTD.
    公开号:US20160060376A1
    公开(公告)日:2016-03-03
    The present invention provides a fluorine-containing and silicon-containing polymer of the general formula (A) or (B) (wherein each symbol is as defined in the description) which is useful for forming a surface treatment layer having water-repellency, oil-repellency and antifouling property and excellent surface slip property.
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