There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure:
wherein R
1
, R
2
, R
3
and R
5
are each a hydrogen atom or a methyl group; R
4
is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R
6
is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
这里披露了一种用于光刻制程的光波长为220nm或更低的光阻材料,其中包括至少由以下式子(2)表示的聚合物和用于曝光生成酸的光酸发生剂:
式中,R1、R2、R3和R5均为氢原子或甲基基团;R4为酸敏基团、具有酸敏基团的7至13个碳原子的脂
环烃基团、具有羧基的7至13个碳原子的脂
环烃基团或具有环氧基的3至13个碳原子的烃基团;R6为氢原子、具有1至12个碳原子的烃基团或具有羧基的7至13个碳原子的脂
环烃基团;x、y和z为可选值,满足x+y+z=1,0
树脂:
式中,R8为氢原子或甲基基团,R9为具有脂环内酯结构的7至16个碳原子的烃基团。