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3-methyl-hexahydro-3,5-methano-cyclopenta[b]furan-2-one | 38335-10-3

中文名称
——
中文别名
——
英文名称
3-methyl-hexahydro-3,5-methano-cyclopenta[b]furan-2-one
英文别名
3-Methylhexahydro-2H-3,5-methanocyclopenta[b]furan-2-one;6-methyl-4-oxatricyclo[4.2.1.03,7]nonan-5-one
3-methyl-hexahydro-3,5-methano-cyclopenta[<i>b</i>]furan-2-one化学式
CAS
38335-10-3
化学式
C9H12O2
mdl
——
分子量
152.193
InChiKey
ALKDAFQHIOYGJH-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.4
  • 重原子数:
    11
  • 可旋转键数:
    0
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.89
  • 拓扑面积:
    26.3
  • 氢给体数:
    0
  • 氢受体数:
    2

文献信息

  • (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
    申请人:Maeda Katsumi
    公开号:US20090023878A1
    公开(公告)日:2009-01-22
    There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R 1 , R 2 , R 3 and R 5 are each a hydrogen atom or a methyl group; R 4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R 6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
    这里披露了一种用于光刻制程的光波长为220nm或更低的光阻材料,其中包括至少由以下式子(2)表示的聚合物和用于曝光生成酸的光酸发生剂: 式中,R1、R2、R3和R5均为氢原子或甲基基团;R4为酸敏基团、具有酸敏基团的7至13个碳原子的脂环烃基团、具有羧基的7至13个碳原子的脂环烃基团或具有环氧基的3至13个碳原子的烃基团;R6为氢原子、具有1至12个碳原子的烃基团或具有羧基的7至13个碳原子的脂环烃基团;x、y和z为可选值,满足x+y+z=1,0
  • SULFONIUM COMPOUND
    申请人:MASUYAMA Tatsuro
    公开号:US20100248135A1
    公开(公告)日:2010-09-30
    The present invention provides a sulfonium compound represented by the formula (I): wherein Q 1 and Q 2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, R1 represents a C5-C42 organic group having a β-ketoester structure and A + represents an organic counter ion, and a chemically amplified photoresist composition comprising the above-mentioned sulfonium compound and a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.
  • METHOD FOR PRODUCING RESIST COPOLYMER HAVING LOW MOLECULAR WEIGHT
    申请人:MARUZEN PETROCHEMICAL CO., LTD.
    公开号:US20130123446A1
    公开(公告)日:2013-05-16
    A method for producing a resist copolymer having a weight-average molecular weight of not less than 3000 and not more than 6000, in which copolymer the contents of an oligomer having a molecular weight of not more than 1000 and a byproduct derived from a polymerization initiator are small, is provided. The method for producing a resist copolymer comprises the step of continuously supplying a solution containing a monomer and a solution containing a polymerization initiator to a heated solvent to carry out a radical polymerization, wherein the variation range of the concentration of the polymerization initiator in polymerization solution is within ±25% of the median value between the maximum concentration and the minimum concentration during specific time; and the variation range of the concentration of unreacted monomer in the polymerization solution is within ±35% of the median value between the maximum concentration and the minimum concentration during specific time.
  • ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN USING THE COMPOSITION, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20140212814A1
    公开(公告)日:2014-07-31
    Provided is an actinic-ray- or radiation-sensitive resin composition, including any of compounds of general formula (1) below that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer.
  • ACTINIC RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN
    申请人:FUJIFILM Corporation
    公开号:US20140234759A1
    公开(公告)日:2014-08-21
    According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition containing (A) a resin containing a repeating unit represented by general formula (1) below and a repeating unit that is decomposed by an action of an acid to generate an alkali-soluble group, and (B) a compound that generates the acid when exposed to actinic rays or radiation, where L represents a bivalent connecting group, R 1 represents a hydrogen atom or an alkyl group, and Z represents a cyclic acid anhydride structure.
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