There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure:
wherein R
1
, R
2
, R
3
and R
5
are each a hydrogen atom or a methyl group; R
4
is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R
6
is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
这里披露了一种用于光刻制程的光波长为220nm或更低的光阻材料,其中包括至少由以下式子(2)表示的聚合物和用于曝光生成酸的光酸发生剂:
式中,R1、R2、R3和R5均为氢原子或甲基基团;R4为酸敏基团、具有酸敏基团的7至13个碳原子的脂环烃基团、具有羧基的7至13个碳原子的脂环烃基团或具有环氧基的3至13个碳原子的烃基团;R6为氢原子、具有1至12个碳原子的烃基团或具有羧基的7至13个碳原子的脂环烃基团;x、y和z为可选值,满足x+y+z=1,0
SULFONIUM COMPOUND
申请人:MASUYAMA Tatsuro
公开号:US20100248135A1
公开(公告)日:2010-09-30
The present invention provides a sulfonium compound represented by the formula (I):
wherein Q
1
and Q
2
each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, R1 represents a C5-C42 organic group having a β-ketoester structure and A
+
represents an organic counter ion, and a chemically amplified photoresist composition comprising the above-mentioned sulfonium compound and a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.
METHOD FOR PRODUCING RESIST COPOLYMER HAVING LOW MOLECULAR WEIGHT
申请人:MARUZEN PETROCHEMICAL CO., LTD.
公开号:US20130123446A1
公开(公告)日:2013-05-16
A method for producing a resist copolymer having a weight-average molecular weight of not less than 3000 and not more than 6000, in which copolymer the contents of an oligomer having a molecular weight of not more than 1000 and a byproduct derived from a polymerization initiator are small, is provided.
The method for producing a resist copolymer comprises the step of continuously supplying a solution containing a monomer and a solution containing a polymerization initiator to a heated solvent to carry out a radical polymerization, wherein the variation range of the concentration of the polymerization initiator in polymerization solution is within ±25% of the median value between the maximum concentration and the minimum concentration during specific time; and the variation range of the concentration of unreacted monomer in the polymerization solution is within ±35% of the median value between the maximum concentration and the minimum concentration during specific time.
ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN USING THE COMPOSITION, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE
申请人:FUJIFILM Corporation
公开号:US20140212814A1
公开(公告)日:2014-07-31
Provided is an actinic-ray- or radiation-sensitive resin composition, including any of compounds of general formula (1) below that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer.
ACTINIC RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN
申请人:FUJIFILM Corporation
公开号:US20140234759A1
公开(公告)日:2014-08-21
According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition containing
(A) a resin containing a repeating unit represented by general formula (1) below and a repeating unit that is decomposed by an action of an acid to generate an alkali-soluble group, and
(B) a compound that generates the acid when exposed to actinic rays or radiation,
where
L represents a bivalent connecting group,
R
1
represents a hydrogen atom or an alkyl group, and
Z represents a cyclic acid anhydride structure.
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