6-methacryloyl-6-azabicyclo[3.2.0]heptan-7-one | 1267624-16-7

• 物质功能分类: 有机原料 - 酮类化合物
• 分子结构分类: 有机化合物 - 有机杂环化合物 - 内酰胺类
• 英文名称: 6-methacryloyl-6-azabicyclo[3.2.0]heptan-7-one
• 英文别名: 6-(2-methylprop-2-enoyl)-6-azabicyclo[3.2.0]heptan-7-one
• CAS: 1267624-16-7
• 化学式: C₁₀H₁₃NO₂
• 分子量: 179.219
• InChiKey: LTOHYCJMUWCZBU-UHFFFAOYSA-N

物化性质

• 沸点：
  276.0±23.0 °C(Predicted)
• 密度：
  1.179±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.1
• 重原子数：
  13
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.6
• 拓扑面积：
  37.4
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  7-oxo-6-aza-bicyclo[3.2.0]heptane-6-sulfonyl chloride 在 4-二甲氨基吡啶 、 三乙胺 、 sodium sulfite 作用下， 以 二氯甲烷 、 水 为溶剂， 反应 3.0h， 生成 6-methacryloyl-6-azabicyclo[3.2.0]heptan-7-one
  参考文献：
  名称：

  一种光刻胶酸扩散抑制剂的制备方法

  摘要：

  本发明提供一种光刻胶酸扩散抑制剂的制备方法。该光刻胶酸扩散抑制剂的制备方法包括如下步骤：a)式I化合物与式Ⅱ化合物进行环加成、水解反应，然后调节反应液的PH至7～8，获得式Ⅲ化合物；b)将步骤a)的反应产物式Ⅲ化合物、缚酸剂、催化剂与式Ⅳ化合物进行酯化反应，获得式Ⅴ化合物。本发明光刻胶酸扩散抑制剂的制备方法收率高、纯度高。

  公开号：

  CN114262289A

文献信息

• N-acyl-β-lactam derivative, macromolecular compound, and photoresist composition
  申请人：Fukumoto Takashi

  公开号：US08859183B2

  公开（公告）日：2014-10-14

  Provided are N-acyl-β-lactam derivatives represented by the following general formula, from which a photoresist composition capable of controlling an acid diffusion length to be short is obtained; a polymer obtained by polymerizing the N-acyl-β-lactam derivative represented by the following general formula as one of starting materials; and a photoresist composition containing the polymer, where the structural variables are as defined herein.

  提供了由以下一般公式表示的N-酰基-β-内酰胺衍生物，从中可以获得一种能够控制酸扩散长度较短的光刻胶组合物；一种由将以下一般公式表示的N-酰基-β-内酰胺衍生物聚合而成的聚合物作为起始材料之一；以及含有该聚合物的光刻胶组合物， 其中结构变量如本文所定义。
• N-ACYL-B-LACTAM DERIVATIVE, MACROMOLECULAR COMPOUND, AND PHOTORESIST COMPOSITION
  申请人：Fukumoto Takashi

  公开号：US20120148954A1

  公开（公告）日：2012-06-14

  Disclosed are an N-acyl-β-lactam derivative represented by the following general formula, from which a photoresist composition capable of controlling an acid diffusion length to be short is obtained; a polymer obtained by polymerizing the N-acyl-β-lactam derivative represented by the following general formula as one of starting materials; and a photoresist composition containing the polymer. In the formula, R 1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group; W represents an alkylene group or a cycloalkylene group; n represents 0 or 1; and each of R 2 , R 3 , R 4 , and R 5 independently represents a hydrogen atom, an alkyl group, a cyclic hydrocarbon group, or an acyloxy group, provided that 1) R 2 and R 3 , or R 4 and R 5 , may be connected to each other to form a substituted or unsubstituted ring which may have an oxygen atom at an arbitrary position, 2) R 3 and R 4 may be connected to each other to form a substituted or unsubstituted ring which may have an oxygen atom at an arbitrary position, and 3) all of R 2 , R 3 , R 4 , and R 5 are not a hydrogen atom at the same time.

  本公开了一种N-酰基-β-内酰胺衍生物，其由以下通用式表示，从中可以获得一种能够控制酸扩散长度较短的光刻胶组合物；一种由将以下通用式表示的N-酰基-β-内酰胺衍生物聚合而成的聚合物作为起始材料之一；以及含有该聚合物的光刻胶组合物。在该式中，R1代表氢原子、甲基或三氟甲基基团；W代表烷基基团或环烷基基团；n代表0或1；而R2、R3、R4和R5中的每一个独立地代表氢原子、烷基基团、环烃基团或酰氧基团，前提是1）R2和R3，或R4和R5，可以连接在一起形成一个取代或未取代的环，该环在任意位置可能有一个氧原子，2）R3和R4可以连接在一起形成一个取代或未取代的环，该环在任意位置可能有一个氧原子，3）R2、R3、R4和R5中的所有基团不同时为氢原子。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND PRODUCTION METHOD FOR ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：EP3885378A1

  公开（公告）日：2021-09-29

  An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition, in which the cross-sectional shape of a pattern thus formed has excellent rectangularity and a dimensional variation of the line width of the pattern thus formed hardly occurs even over time after preparation. Furthermore, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin having a polarity that increases through decomposition by an action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, and a halogen-based solvent, in which a content of the halogen-based solvent is from 1 ppb by mass to 50 ppm by mass with respect to a total mass of the composition.

  本发明的一个目的是提供一种对辐射线敏感或辐射敏感的树脂组合物，在这种组合物中，由此形成的图案的横截面形状具有极佳的矩形性，而且由此形成的图案的线宽即使在制备后一段时间内也几乎不会发生尺寸变化。此外，本发明的另一个目的是提供一种抗蚀剂薄膜、一种图案形成方法和一种制造电子设备的方法，每种方法都使用了对放 射线敏感或对辐射敏感的树脂组合物。 本发明一个实施例中的对放 射线敏感或对辐射敏感的树脂组合物包括极性在酸的作用下分解而增加的树脂、在放 射线或辐射照射下产生酸的化合物和卤素基溶剂，其中卤素基溶剂的含量相对于组合物的总 质量为 1 ppb 至 50 ppm。
• RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：Ichikawa Koji

  公开号：US20110053082A1

  公开（公告）日：2011-03-03

  A resin comprises a structural unit derived from a compound represented by the formula (I); wherein R 1 represents a hydrogen atom, a halogen atom or a C 1 to C 6 alkyl group that optionally has one or more halogen atoms; X 1 represents a C 2 to C 36 heterocyclic group, one or more hydrogen atoms contained in the heterocyclic group may be replaced by a halogen atom, a hydroxy group, a C 1 to C 24 hydrocarbon group, a C 1 to C 12 alkoxyl group, a C 2 to C 4 acyl group, or a C 2 to C 4 acyloxy group, and one or more —CH 2 — contained in the heterocyclic group may be replaced by —CO— or —O—.
• PATTERN FORMING PROCESS AND SHRINK AGENT
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160139512A1

  公开（公告）日：2016-05-19

  A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactone under the action of acid in a C 7 -C 16 ester or C 8 -C 16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.