1-(Chloromethoxy)adamantane | 177093-80-0

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1-(Chloromethoxy)adamantane
• CAS: 177093-80-0
• 化学式: C₁₁H₁₇ClO
• 分子量: 200.708
• InChiKey: FPRKMBBHIASNOM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.4
• 重原子数：
  13
• 可旋转键数：
  2
• 环数：
  4.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  1-(Chloromethoxy)adamantane 在 sodium hydroxide 、 氢气 、 碳酸氢钠 、 (benzotriazo-1-yloxy)tris(dimethylamino)phosphonium hexafluorophosphate 作用下， 生成 tert-butyl (2S)-2-[[(2S)-3-[3-(1-adamantyloxymethyl)imidazol-4-yl]-1-[(2S)-2-carbamoylpyrrolidin-1-yl]-1-oxopropan-2-yl]carbamoyl]-5-oxopyrrolidine-1-carboxylate
  参考文献：
  名称：

  Development of a New N.PI.-Protecting Group for Histidine, N.PI.-1-Adamantyloxymethylhistidine.

  摘要：

  制备Nπ-1-金刚烷氧基甲基组氨酸His(Nπ-1-Adom)，并检查1-Adom基团的性质。 1-Adom基团可以很容易地被TFA去除；对 20% 哌啶/DMF 和 1N NaOH 稳定。 His(Nπ-1-Adom)衍生物可以抑制偶联反应过程中的外消旋化。利用His(Nπ-1-Adom)成功合成了TRH。

  DOI：

  10.1248/cpb.44.871
• 作为产物：
  描述：

  1-Adamantyloxymethyl methyl sulfide 在 磺酰氯 作用下， 以 二氯甲烷 为溶剂， 生成 1-(Chloromethoxy)adamantane
  参考文献：
  名称：

  Development of a New N.PI.-Protecting Group for Histidine, N.PI.-1-Adamantyloxymethylhistidine.

  摘要：

  制备Nπ-1-金刚烷氧基甲基组氨酸His(Nπ-1-Adom)，并检查1-Adom基团的性质。 1-Adom基团可以很容易地被TFA去除；对 20% 哌啶/DMF 和 1N NaOH 稳定。 His(Nπ-1-Adom)衍生物可以抑制偶联反应过程中的外消旋化。利用His(Nπ-1-Adom)成功合成了TRH。

  DOI：

  10.1248/cpb.44.871

文献信息

• SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN
  申请人：ICHIKAWA Koji

  公开号：US20120264060A1

  公开（公告）日：2012-10-18

  A salt represented by formula (I): wherein Q 1 and Q 2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, L 1 represents a C1-C17 divalent saturated hydrocarbon group in which a methylene group may be replaced by an oxygen atom or a carbonyl group, L 2 and L 3 respectively represent a single bond or a C1-C6 divalent saturated alkyl group in which a methylene group may be replaced by an oxygen atom or a carbonyl group, ring W 1 and ring W 2 respectively represent a C3-C36 hydrocarbon ring, R 1 and R 2 respectively represent a hydrogen atom or C1-C6 alkyl group, R 3 represents C1-C6 alkyl group, t represents an integer of 0 to 2 and Z + represents an organic counter ion

  一种由化学式（I）表示的盐：其中Q1和Q2分别代表氟原子或C1-C6全氟烷基基团，L1代表C1-C17的二价饱和碳氢基团，其中一个亚甲基基团可被氧原子或羰基取代，L2和L3分别代表单键或C1-C6的二价饱和烷基基团，其中一个亚甲基基团可被氧原子或羰基取代，环W1和环W2分别代表C3-C36的碳氢环，R1和R2分别代表氢原子或C1-C6烷基基团，R3代表C1-C6烷基基团，t代表0到2之间的整数，Z+代表有机对离子。
• Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method
  申请人：Ogata Toshiyuki

  公开号：US20080166655A1

  公开（公告）日：2008-07-10

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH 2 —OCH 2  n R 1 (1) (wherein R 1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，该化合物可以构成一种光刻胶组合物，该组合物能够具有优异的分辨率，形成具有良好矩形度的精细图案，即使从酸发生器生成的酸的强度较弱，也能获得良好的抗性特性，并具有良好的灵敏度；包括该聚合物化合物的光刻胶组合物；以及使用该光刻胶组合物的抗性图案形成方法。该光刻胶组合物和抗性图案形成方法使用包括碱溶性基团（i）的聚合物化合物，其中碱溶性基团（i）是从醇羟基、羧基或酚羟基中至少选择一个取代基团，并且该取代基团由一种酸解离、抑制溶解的基团（ii）保护，该基团由通式（1）表示：—CH2—OCH2nR1（1）（其中R1表示不含有超过20个碳原子的环烷基团，可能含有氧原子、氮原子、硫原子或卤素原子，n表示0或1到5的整数）。
• Sulfonamide compound, polymer compound, reist material and pattern formation method
  申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

  公开号：EP1517181A1

  公开（公告）日：2005-03-23

  A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3:    wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.

  抗蚀剂材料的基质聚合物包括由以下化学式 3 的通式表示的单元： 其中 R1、R2 和 R3 相同或不同，并且是氢原子、氟原子、直链烷基、支链或环状烷基或碳原子数不少于 1 且不多于 20 的氟化烷基；R4 是碳原子数不少于 0 且不多于 20 的直链亚烷基或支链或环状亚烷基；R5和R6相同或不同，并且是氢原子、直链烷基、支链或环状烷基、碳原子数不小于1且不大于20的氟化烷基或由酸释放的保护基。
• POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP1717261A1

  公开（公告）日：2006-11-02

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，它可以构成一种光刻胶组合物，该组合物能够具有极佳的分辨率，形成具有良好矩形度的精细图案，即使在酸发生器产生的酸的酸强度较弱时也能获得良好的抗蚀特性，并且具有良好的灵敏度；一种包括该聚合物化合物的光刻胶组合物；以及一种使用该光刻胶组合物的抗蚀图案形成方法。光刻胶组合物和抗蚀剂图案形成方法使用包括碱溶性基团(i)的聚合物化合物，其中碱溶性基团(i)是至少一个选自醇羟基、羧基或酚羟基的取代基，取代基被通式(1)表示的可酸解、溶解抑制基团(ii)保护： (其中 R1 代表含不超过 20 个碳原子的环脂族基团，可包含氧原子、氮原子、硫原子或卤素原子，n 代表 0 或 1 至 5 的整数）。
• Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：EP2433972A1

  公开（公告）日：2012-03-28

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，它可以构成一种光刻胶组合物，该组合物能够具有极佳的分辨率，形成具有良好矩形度的精细图案，即使在酸发生器产生的酸的酸强度较弱时也能获得良好的抗蚀特性，并且具有良好的灵敏度；一种包括该聚合物化合物的光刻胶组合物；以及一种使用该光刻胶组合物的抗蚀图案形成方法。光刻胶组合物和抗蚀剂图案形成方法使用包括碱溶性基团(i)的聚合物化合物，其中碱溶性基团(i)是至少一个选自醇羟基、羧基或酚羟基的取代基，取代基被通式(1)表示的可酸解、溶解抑制基团(ii)保护： (其中 R1 代表含不超过 20 个碳原子的环脂族基团，可包含氧原子、氮原子、硫原子或卤素原子，n 代表 0 或 1 至 5 的整数）。