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Hexafluordihydro-α-terpineol | 30129-13-6

中文名称
——
中文别名
——
英文名称
Hexafluordihydro-α-terpineol
英文别名
1,1,1,3,3,3-Hexafluoro-2-(4-methylcyclohexyl)propan-2-ol
Hexafluordihydro-α-terpineol化学式
CAS
30129-13-6
化学式
C10H14F6O
mdl
——
分子量
264.211
InChiKey
NACQSJRLPPXKKB-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4.3
  • 重原子数:
    17
  • 可旋转键数:
    1
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    20.2
  • 氢给体数:
    1
  • 氢受体数:
    7

反应信息

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文献信息

  • CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS
    申请人:Ohsawa Youichi
    公开号:US20130034813A1
    公开(公告)日:2013-02-07
    A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.
    一种化学增感正型光刻胶组合物,包括(A)三甲基-3,3,3-三-2-羟基-2-丙酸磺酸盐,(B)酸发生剂,(C)碱性树脂和(D)有机溶剂,适用于ArF浸没光刻。羧酸磺酸盐具有高度疏性,在浸没中几乎不溶出。通过控制酸扩散,可以构建具有高分辨率的图案轮廓。
  • FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20140114080A1
    公开(公告)日:2014-04-24
    A fluorinated monomer has formula (1) wherein R 1 is H, F, methyl or trifluoromethyl, R 2 and R 3 are H or a monovalent hydrocarbon group, R 4 to R 6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k 1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
    一种化单体具有式(1),其中R1为H,F,甲基或三甲基,R2和R3为H或单价烃基,R4到R6各自为单价化烃基,A为二价烃基,k1为0、1或2。从化单体衍生的聚合物可以赋予适当的抗性、滑性、酸性易变性和解性,并且在制定抗蚀涂料组合物时作为添加聚合物是有用的。
  • Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition, Top Coat Composition And Pattern Formation Method
    申请人:Mori Kazunori
    公开号:US20120077126A1
    公开(公告)日:2012-03-29
    A fluorine-containing polymer of the present invention contains a repeating unit (a) of the general formula (2) and has a mass-average molecular weight of 1,000 to 1,000,000. This polymer is suitably used in a resist composition for pattern formation by high energy ray radiation of 300 nm or less wavelength or electron beam radiation or a top coat composition for liquid immersion lithography and is characterized as having high water repellency, notably high receding contact angle. In the formula, R 1 represents a polymerizable double bond-containing group; R 2 represents a fluorine atom or a fluorine-containing alkyl group; R 8 represents a substituted or unsubstituted alkyl group or the like; and W 1 represents a single bond, a substituted or unsubstituted methylene group or the like.
    本发明的含聚合物包含通式(2)的重复单元(a),其具有1,000至1,000,000的质量平均分子量。该聚合物适用于抗高能辐射(波长小于或等于300nm的高能射线辐射或电子束辐射)的光阻组合物,或用于液体浸没光刻的面涂层组合物,并具有高珠性,尤其是高后退接触角。在公式中,R1表示可聚合的双键含有的基团;R2表示原子或含氟烷基;R8表示取代或未取代的烷基或类似物;W1表示单键,取代或未取代的亚甲基或类似物。
  • Polymer, resist protective coating material, and patterning process
    申请人:Harada Yuji
    公开号:US20080085466A1
    公开(公告)日:2008-04-10
    A resist protective coating material comprises a polymer comprising repeat units having formulae (1 a ) and (1 b ) and having a Mw of 1,000-500,000. R 1a and R 1b are H, F or alkyl or fluoroalkyl, R 2a , R 2b , R 3a and R 3b are H or alkyl, or R 2a and R 2b , and R 3a and R 3b may bond together to form a ring, 0
  • Polymer, resist composition, and patterning process
    申请人:Harada Yuji
    公开号:US20080118860A1
    公开(公告)日:2008-05-22
    To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.
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