CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS
申请人:Ohsawa Youichi
公开号:US20130034813A1
公开(公告)日:2013-02-07
A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.
一种化学增感正型光刻胶组合物,包括(A)三氟甲基-3,3,3-三氟-2-羟基-2-丙酸磺酸盐,(B)酸发生剂,(C)碱性树脂和(D)有机溶剂,适用于ArF浸没光刻。羧酸磺酸盐具有高度疏水性,在浸没水中几乎不溶出。通过控制酸扩散,可以构建具有高分辨率的图案轮廓。